Materials Map

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (21/21 displayed)

  • 2022NaOCl Application after Acid Etching and Retention of Cervical Restorations: A 3-Year Randomized Clinical Trialcitations
  • 2017Electron holography on HfO2/HfO2-x bilayer structures with multilevel resistive switching properties33citations
  • 2017Electron holography on HfO2/HfO2−xbilayer structures with multilevel resistive switching propertiescitations
  • 2017Electron holography on HfO2/HfO2−x bilayer structures with multilevel resistive switching propertiescitations
  • 2017Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001)11citations
  • 2016Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)12citations
  • 2016Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOx/Pt based ReRAM58citations
  • 2015Ternary and quaternary Ni(Si)Ge(Sn) contact formation for highly strained Ge p- and n-MOSFETs30citations
  • 2015Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillarscitations
  • 2015Ba termination of Ge(001) studied with STMcitations
  • 2015Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy35citations
  • 2015Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Si27citations
  • 2014Structural Changes of Ultrathin $mathrm{Cub-PrO_2(111)/Si(111)}$ Films Due to Thermally Induced Oxygen Desorption12citations
  • 2014Towards forming-free resistive switching in oxygen engineered $HfO_{2−x}$163citations
  • 2013Surface morphology of ultrathin $hex-Pr_{2}O-{3}$ films on Si(1 1 1)7citations
  • 2012Hard X-ray Photoelectron Spectroscopy study of the electroforming in $Ti/HfO_{2}$-based resistive switching structures95citations
  • 2011Post deposition annealing of praseodymia films on Si(111) at low temperatures5citations
  • 2011Atomic-scale engineering of future high-k dynamic random access memory dielectrics6citations
  • 2009Postdeposition annealing induced transition from hexagonal $Pr_2O_3$ to cubic $PrO_2$ films on Si(111)20citations
  • 2009Defect structure of Ge(111)/cubic Pr2O3(111)/Si(111) heterostructures: Thickness and annealing dependence21citations
  • 2009Postdeposition annealing induced transition from hexagonal Pr2O3 to cubic PrO2 films on Si(111)20citations

Places of action

Chart of shared publication
Montagner, Af
1 / 1 shared
Favetti, M.
1 / 1 shared
Cenci, Ms
1 / 1 shared
Pereira-Cenci, T.
1 / 1 shared
Moraes, Rr
1 / 1 shared
Schubert, M. A.
5 / 5 shared
Zaumseil, P.
10 / 11 shared
Niu, G.
4 / 6 shared
Hildebrandt, E.
5 / 6 shared
Niermann, T.
3 / 5 shared
Perez, E.
3 / 3 shared
Alff, L.
5 / 7 shared
Bhupathi, S.
3 / 3 shared
Vogel, S.
4 / 9 shared
Wenger, C.
3 / 3 shared
Lehmann, M.
3 / 7 shared
Sharath, S. U.
5 / 7 shared
Pezzoli, Fabio
1 / 19 shared
Capellini, G.
6 / 13 shared
Isa, F.
3 / 7 shared
Cortinovis, A.
1 / 1 shared
Miglio, Leonida
3 / 9 shared
Marzegalli, Anna
3 / 21 shared
Bonera, Emiliano
1 / 14 shared
Basso Basset, Francesco
1 / 1 shared
Isella, G.
3 / 32 shared
Scaccabarozzi, Andrea
3 / 8 shared
Schlykow, V.
1 / 1 shared
Yamamoto, Y.
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Skibitzki, O.
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Von Kanel, H.
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Klesse, W.
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Schubert, M.
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Barget, Michael Reiner
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Taoka, N.
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Komissinskiy, P.
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Joseph, M. J.
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Kurian, J.
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Mantl, S.
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Mussler, G.
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Wirths, S.
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Troitsch, René
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Hartmann, J-M
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Buca, D.
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Voigt, A.
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Bergamaschini, Roberto
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Montalenti, Francesco Cimbro Mattia
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Backofen, A.
1 / 1 shared
Salvalaglio, Marco
2 / 31 shared
Radny, Mw
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Czajka, R.
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Grzela, T.
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Schofield, Sr
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Koczorowski, W.
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Curson, Nj
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Reich, C.
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Chahine, G.
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Haberlen, M.
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Zoellner, M.
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Xie, Y.
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Schulli, T.
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Richard, M.
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Storck, P.
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Backofen, R.
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Bäumer, M.
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Gevers, S.
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Zoellner, M. H.
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Schaefer, A.
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Wilkens, H.
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Wollschläger, J.
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Röhe, S.
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Bertaud, T.
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Walczyk, D.
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Walczyk, C.
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Calka, P.
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Gloskovskii, A.
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Sowinska, M.
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Zoellner, Marvin
1 / 1 shared
Wollschlaeger, Joachim
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Rodewald, Jari
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Wilkens, Henrik
1 / 1 shared
Gevers, Sebastian
1 / 1 shared
Lukosius, M.
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Drube, W.
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Walczyk, Ch.
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Thiess, S.
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Giussani, A.
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Weisemoeller, T.
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Bruns, D.
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Lippert, G.
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Schmidt, R.
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Kozowski, G.
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Dabrowski, J.
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Schmeißer, D.
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Bauer, J.
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Fursenko, O.
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Lupina, G.
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Zschech, E.
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Dudek, P.
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Müssig, H.-J.
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Bertram, F.
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Tobergte, H.
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Deiter, C.
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Greuling, A.
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Neumann, M.
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Wollschläger, Joachim
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Rodenbach, P.
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Weidner, G.
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Geiger, D.
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Lichte, H.
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Co-Authors (by relevance)

  • Montagner, Af
  • Favetti, M.
  • Cenci, Ms
  • Pereira-Cenci, T.
  • Moraes, Rr
  • Schubert, M. A.
  • Zaumseil, P.
  • Niu, G.
  • Hildebrandt, E.
  • Niermann, T.
  • Perez, E.
  • Alff, L.
  • Bhupathi, S.
  • Vogel, S.
  • Wenger, C.
  • Lehmann, M.
  • Sharath, S. U.
  • Pezzoli, Fabio
  • Capellini, G.
  • Isa, F.
  • Cortinovis, A.
  • Miglio, Leonida
  • Marzegalli, Anna
  • Bonera, Emiliano
  • Basso Basset, Francesco
  • Isella, G.
  • Scaccabarozzi, Andrea
  • Schlykow, V.
  • Yamamoto, Y.
  • Skibitzki, O.
  • Von Kanel, H.
  • Klesse, W.
  • Schubert, M.
  • Barget, Michael Reiner
  • Taoka, N.
  • Komissinskiy, P.
  • Joseph, M. J.
  • Kurian, J.
  • Mantl, S.
  • Mussler, G.
  • Wirths, S.
  • Troitsch, René
  • Hartmann, J-M
  • Buca, D.
  • Voigt, A.
  • Bergamaschini, Roberto
  • Montalenti, Francesco Cimbro Mattia
  • Backofen, A.
  • Salvalaglio, Marco
  • Radny, Mw
  • Czajka, R.
  • Grzela, T.
  • Schofield, Sr
  • Koczorowski, W.
  • Curson, Nj
  • Reich, C.
  • Chahine, G.
  • Haberlen, M.
  • Zoellner, M.
  • Xie, Y.
  • Schulli, T.
  • Richard, M.
  • Storck, P.
  • Backofen, R.
  • Bäumer, M.
  • Gevers, S.
  • Zoellner, M. H.
  • Schaefer, A.
  • Wilkens, H.
  • Wollschläger, J.
  • Röhe, S.
  • Bertaud, T.
  • Walczyk, D.
  • Walczyk, C.
  • Calka, P.
  • Gloskovskii, A.
  • Sowinska, M.
  • Zoellner, Marvin
  • Wollschlaeger, Joachim
  • Rodewald, Jari
  • Wilkens, Henrik
  • Gevers, Sebastian
  • Lukosius, M.
  • Drube, W.
  • Walczyk, Ch.
  • Thiess, S.
  • Giussani, A.
  • Weisemoeller, T.
  • Bruns, D.
  • Lippert, G.
  • Schmidt, R.
  • Kozowski, G.
  • Dabrowski, J.
  • Schmeißer, D.
  • Bauer, J.
  • Fursenko, O.
  • Lupina, G.
  • Zschech, E.
  • Dudek, P.
  • Müssig, H.-J.
  • Bertram, F.
  • Tobergte, H.
  • Deiter, C.
  • Greuling, A.
  • Neumann, M.
  • Wollschläger, Joachim
  • Rodenbach, P.
  • Weidner, G.
  • Geiger, D.
  • Lichte, H.
OrganizationsLocationPeople

article

Postdeposition annealing induced transition from hexagonal Pr2O3 to cubic PrO2 films on Si(111)

  • Bertram, F.
  • Gevers, S.
  • Wollschläger, Joachim
  • Schroeder, T.
  • Tobergte, H.
  • Giussani, A.
  • Deiter, C.
  • Greuling, A.
  • Neumann, M.
  • Weisemoeller, T.
Abstract

<jats:p>Films of hexagonal praseodymium sesquioxide (h-Pr2O3) were deposited on Si(111) by molecular beam epitaxy and thereafter annealed in 1 atm oxygen at different temperatures, ranging from 100 to 700 °C. The films of the samples annealed at 300 °C or more were transformed to PrO2 with B-oriented Fm3¯m structure, while films annealed at lower temperatures kept the hexagonal structure. The films are composed of PrO2 and PrO2−δ species, which coexist laterally and are tetragonally distorted due to the interaction at the interface between oxide film and Si substrate. Compared to PrO2, PrO2−δ has the same cubic structure but with oxygen vacancies. The oxygen vacancies are partly ordered and increase the vertical lattice constant of the film, whereas the lateral lattice constant is almost identical for both species and on all samples. The latter lattice constant matches the lattice constant of the originally crystallized hexagonal praseodymium sesquioxide. That means that no long range reordering of the praseodymium atoms takes place during the phase transformation.</jats:p>

Topics
  • impedance spectroscopy
  • phase
  • Oxygen
  • annealing
  • Praseodymium