Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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Giussani, A.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (7/7 displayed)

  • 2016Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials109citations
  • 2011Post deposition annealing of praseodymia films on Si(111) at low temperatures5citations
  • 2009Postdeposition annealing induced transition from hexagonal $Pr_2O_3$ to cubic $PrO_2$ films on Si(111)20citations
  • 2009Defect structure of Ge(111)/cubic Pr2O3(111)/Si(111) heterostructures: Thickness and annealing dependence21citations
  • 2009Postdeposition annealing induced transition from hexagonal Pr2O3 to cubic PrO2 films on Si(111)20citations
  • 2008Engineering the semiconductor/oxide interaction for stacking twin suppression in single crystalline epitaxial silicon(111)/insulator/Si(111) heterostructurescitations
  • 2000Proton, photon and neutron activation analysis for the determination of stable isotopes of gadolinium in human blood plasma5citations

Places of action

Chart of shared publication
Mazzarello, R.
1 / 1 shared
Zallo, E.
1 / 6 shared
Riechert, H.
1 / 11 shared
Privitera, S.
1 / 2 shared
Zhang, W.
1 / 58 shared
Bragaglia, V.
1 / 4 shared
Arciprete, F.
1 / 10 shared
Mio, Am
1 / 1 shared
Perumal, K.
1 / 4 shared
Cecchi, S.
1 / 14 shared
Calarco, R.
1 / 16 shared
Rimini, E.
1 / 3 shared
Boschker, Je
1 / 1 shared
Gevers, S.
3 / 5 shared
Schroeder, T.
4 / 21 shared
Weisemoeller, T.
3 / 4 shared
Wollschläger, J.
2 / 8 shared
Bruns, D.
1 / 3 shared
Bertram, F.
2 / 12 shared
Tobergte, H.
2 / 2 shared
Deiter, C.
2 / 5 shared
Greuling, A.
2 / 4 shared
Neumann, M.
2 / 8 shared
Storck, P.
2 / 3 shared
Wollschläger, Joachim
2 / 25 shared
Rodenbach, P.
1 / 1 shared
Schubert, M. A.
1 / 5 shared
Weidner, G.
1 / 1 shared
Geiger, D.
2 / 3 shared
Zaumseil, P.
2 / 11 shared
Lichte, H.
2 / 3 shared
Schroetter, T.
1 / 1 shared
Seifarth, O.
1 / 1 shared
Müssig, H.-J.
1 / 2 shared
Dabrowski, J.
1 / 2 shared
Tsipenyuk, Y. M.
1 / 1 shared
Cantone, M. C.
1 / 4 shared
Bartolo, D. De
1 / 1 shared
Gorbunov, A. V.
1 / 2 shared
Firsov, V. I.
1 / 1 shared
Cornolti, E.
1 / 1 shared
Chart of publication period
2016
2011
2009
2008
2000

Co-Authors (by relevance)

  • Mazzarello, R.
  • Zallo, E.
  • Riechert, H.
  • Privitera, S.
  • Zhang, W.
  • Bragaglia, V.
  • Arciprete, F.
  • Mio, Am
  • Perumal, K.
  • Cecchi, S.
  • Calarco, R.
  • Rimini, E.
  • Boschker, Je
  • Gevers, S.
  • Schroeder, T.
  • Weisemoeller, T.
  • Wollschläger, J.
  • Bruns, D.
  • Bertram, F.
  • Tobergte, H.
  • Deiter, C.
  • Greuling, A.
  • Neumann, M.
  • Storck, P.
  • Wollschläger, Joachim
  • Rodenbach, P.
  • Schubert, M. A.
  • Weidner, G.
  • Geiger, D.
  • Zaumseil, P.
  • Lichte, H.
  • Schroetter, T.
  • Seifarth, O.
  • Müssig, H.-J.
  • Dabrowski, J.
  • Tsipenyuk, Y. M.
  • Cantone, M. C.
  • Bartolo, D. De
  • Gorbunov, A. V.
  • Firsov, V. I.
  • Cornolti, E.
OrganizationsLocationPeople

article

Postdeposition annealing induced transition from hexagonal Pr2O3 to cubic PrO2 films on Si(111)

  • Bertram, F.
  • Gevers, S.
  • Wollschläger, Joachim
  • Schroeder, T.
  • Tobergte, H.
  • Giussani, A.
  • Deiter, C.
  • Greuling, A.
  • Neumann, M.
  • Weisemoeller, T.
Abstract

<jats:p>Films of hexagonal praseodymium sesquioxide (h-Pr2O3) were deposited on Si(111) by molecular beam epitaxy and thereafter annealed in 1 atm oxygen at different temperatures, ranging from 100 to 700 °C. The films of the samples annealed at 300 °C or more were transformed to PrO2 with B-oriented Fm3¯m structure, while films annealed at lower temperatures kept the hexagonal structure. The films are composed of PrO2 and PrO2−δ species, which coexist laterally and are tetragonally distorted due to the interaction at the interface between oxide film and Si substrate. Compared to PrO2, PrO2−δ has the same cubic structure but with oxygen vacancies. The oxygen vacancies are partly ordered and increase the vertical lattice constant of the film, whereas the lateral lattice constant is almost identical for both species and on all samples. The latter lattice constant matches the lattice constant of the originally crystallized hexagonal praseodymium sesquioxide. That means that no long range reordering of the praseodymium atoms takes place during the phase transformation.</jats:p>

Topics
  • impedance spectroscopy
  • phase
  • Oxygen
  • annealing
  • Praseodymium