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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Bijkerk, Fred
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2022Influence of the Template Layer on the Structure and Ferroelectric Properties of PbZr<sub>0.52</sub>Ti<sub>0.48</sub>O<sub>3</sub> Filmscitations
- 2021Hydrogen etch resistance of aluminium oxide passivated graphitic layerscitations
- 2019Atomic H diffusion and C etching in multilayer graphene monitored using a y based optical sensorcitations
- 2017In vacuo low-energy ions scattering studies of ZrO2 growth by magnetron sputtering
- 2009In-depth agglomeration of d-metals at Si-on-Mo interfacescitations
- 2009Chemically mediated diffusion of d-metals and B through Si and agglomeration at Si-on-Mo interfacescitations
Places of action
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article
In-depth agglomeration of d-metals at Si-on-Mo interfaces
Abstract
Reflective Si/Mo multilayer mirrors with protective d-metal surfaces onto a range of upper Mo and Si layer thicknesses have been grown with physical vapor deposition and investigated on diffusion and in-depth compound formation. Laterally inhomogeneous upward Si and downward d-metal diffusion occurs through Mo layers up to 2 nm thickness. Especially Ru and Rh agglomerate and form silicides such as Ru2Si3 and Rh2Si not in the midst of the Si layer but at the Si/Mo interface. This appears to be mediated by MoSi2 presence at the Si/Mo interface that acts as precursor via better lattice compatibility and lowering of formation energy.