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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Auffret, S.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2022Impact of gigahertz and terahertz transport regimes on spin propagation and conversion in the antiferromagnet IrMn
- 2022Impact of gigahertz and terahertz transport regimes on spin propagation and conversion in the antiferromagnet IrMncitations
- 2022Impact of GHz and THz transport regimes on spin propagation and conversion in the antiferromagnet IrMncitations
- 2021Impact of GHz and THz transport regimes on spin propagation and conversion in the antiferromagnet IrMn
- 2020Single-shot all-optical switching of magnetization in Tb/Co multilayer-based electrodes.citations
- 2020Indium Tin Oxide optical access for magnetic tunnel junctions in hybrid spintronic–photonic circuitscitations
- 2019Stacking order-dependent sign-change of microwave phase due to eddy currents in nanometer-scale NiFe/Cu heterostructurescitations
- 2019Stacking order-dependent sign-change of microwave phase due to eddy currents in nanometer-scale NiFe/Cu heterostructurescitations
- 2017Influence of spin-orbit interaction within the insulating barrier on the electron transport in magnetic tunnel junctionscitations
- 2017Temperature Variation of Magnetic Anisotropy in Pt / Co / AlO x Trilayerscitations
- 2015Non-volatile polarization switch of magnetic domain wall velocitycitations
- 2009Spin injection in silicon at zero magnetic fieldcitations
- 2009Spin injection in silicon at zero magnetic fieldcitations
- 2005Magnetization reversal in Ni(80)Fe(20)/Co(80)Pt(20) bilayerscitations
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article
Spin injection in silicon at zero magnetic field
Abstract
In this letter, we show efficient electrical spin injection into a SiGe based p-i-n light emitting diode from the remanent state of a perpendicularly magnetized ferromagnetic contact. Electron spin injection is carried out through an alumina tunnel barrier from a Co/Pt thin film exhibiting a strong out-of-plane anisotropy. The electron spin polarization is then analyzed through the circular polarization of emitted light. All the light polarization measurements are performed without an external applied magnetic field, i.e., in remanent magnetic states. The light polarization as a function of the magnetic field closely traces the out-of-plane magnetization of the Co/Pt injector. We could achieve a circular polarization degree of the emitted light of 3% at 5 K. Moreover this light polarization remains almost constant at least up to 200 K.