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Naji, M. |
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Motta, Antonella |
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Casati, R. |
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Ager, J. W.
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Publications (11/11 displayed)
- 2013P-type and undoped InGaN across the entire alloy composition range
- 2013P-type InGaN across the entire alloy composition rangecitations
- 2012Embedded binary eutectic alloy nanostructurescitations
- 2009Properties of native point defects in In1-xAlxN alloyscitations
- 2008Characterization of MG-doped InGaN and InALN alloys grown by MBE for solar applicationscitations
- 2008Band gap bowing parameter of In1-x Alx Ncitations
- 2008High efficiency InAlN-based solar cellscitations
- 2008Low-temperature grown compositionally graded InGaN filmscitations
- 2002Band anticrossing in highly mismatched group II-VI semiconductor alloys
- 2002Band anticrossing effects in MgyZn1-yTe 1-xSex alloyscitations
- 2000Synthesis of III-Nx-V1-x Thin Films by N Ion Implantationcitations
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article
Band gap bowing parameter of In1-x Alx N
Abstract
We report a band gap bowing parameter for In<sub>1-x</sub> Al<sub>x</sub> N of 4.7 eV from a study of high quality and homogenous samples with x=0.017-0.60. Optical absorption data were modeled to extract the band gaps in order to consider the complications of the band structure of In-rich InAlN, including the Burstein-Moss shift, nonparabolic conduction band, and broadening of the absorption edge. The alloy compositions were accurately determined using Rutherford backscattering spectrometry and the sample quality was evaluated using x-ray diffraction and channeling-RBS. © 2008 American Institute of Physics.