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Kheng, Kuntheak
Université Grenoble Alpes
in Cooperation with on an Cooperation-Score of 37%
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Publications (4/4 displayed)
- 2017P-i-n InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nmcitations
- 2010Single photons from single CdSe quantum dot embedded in ZnSe nanowirecitations
- 2009Bright CdSe quantum dot inserted in single ZnSe nanowirescitations
- 2008Defect-free ZnSe nanowire and nanoneedle nanostructurescitations
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article
Defect-free ZnSe nanowire and nanoneedle nanostructures
Abstract
We report the growth of ZnSe nanowires and nanoneedles using molecular beam epitaxy (MBE). Different growth regimes were found, depending on growth temperature and the Zn–Se flux ratio. By employing a combined MBE growth of nanowires and nanoneedles without any postprocessing of the sample, we achieved an efficient suppression of stacking fault defects. This is confirmed by transmission electron microscopy and by photoluminescence studies.