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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Teherani, F. Hosseini
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Publications (3/3 displayed)
- 2011Studies of PLD-grown ZnO and MBE-grown GaP mosaic thin films by x-ray scattering methods: beyond the restrictive omega rocking curve linewidth as a figure-of-meritcitations
- 2008A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaNcitations
- 2008Investigations of ZnO thin films grown on c-Al2O3 by pulsed laser deposition in N2 + O2 ambientcitations
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article
A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN
Abstract
<jats:p>Hybrid green light-emitting diodes (LEDs) comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN were grown on semi-insulating AlN/sapphire using pulsed laser deposition for the n-ZnO and metal organic chemical vapor deposition for the other layers. X-ray diffraction revealed that high crystallographic quality was preserved after the n-ZnO growth. LEDs showed a turn-on voltage of 2.5 V and a room temperature electroluminescence (EL) centered at 510 nm. A blueshift and narrowing of the EL peak with increasing current was attributed to bandgap renormalization. The results indicate that hybrid LED structures could hold the prospect for the development of green LEDs with superior performance.</jats:p>