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Hartnett, John G.
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Publications (7/7 displayed)
- 2011Microwave properties of semi-insulating silicon carbide between 10 and 40 GHz and at cryogenic temperaturescitations
- 2010Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs, and 4H–SiC semiconductors under light illumination at cryogenic temperaturescitations
- 2009Measurements of the complex permittivity and the complex permeability of low and medium loss isotropic and uniaxially anisotropic metamaterials at microwave frequenciescitations
- 2008Modified permittivity observed in bulk gallium arsenide and gallium phosphide samples at 50 K using the whispering gallery mode methodcitations
- 2004The microwave Characterization of Single Crystal Lithium and Calcium Fluoride at Cryogenic Temperaturescitations
- 2004The dependence of the permittivity of sapphire on thermal deformation at cryogenic temperaturescitations
- 2003Lithium tantalate - a high permittivity dielectric material for microwave communication systemscitations
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article
Modified permittivity observed in bulk gallium arsenide and gallium phosphide samples at 50 K using the whispering gallery mode method
Abstract
Whispering gallery modes in bulk cylindrical gallium arsenide and gallium phosphide samples have been examined both in darkness and under white light at 50 nbsp;K. In both samples we observed change in permittivity under light and dark conditions. This results from a change in the polarization state of the semiconductor, which is consistent with a free electron-hole creation/recombination process. The permittivity of the semiconductor is modified by free photocarriers in the surface layers of the sample which is the region sampled by whispering gallery modes.