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Mouneyrac, David
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Publications (6/6 displayed)
- 2011Microwave properties of semi-insulating silicon carbide between 10 and 40 GHz and at cryogenic temperaturescitations
- 2010Detrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs, and 4H–SiC semiconductors under light illumination at cryogenic temperaturescitations
- 2009Observation of persistent photoconductivity and modified permittivity in bulk gallium arsenide and gallium phosphide samples at cryogenic temperatures
- 2008Characterization of materials and mode structure of high-Q resonators using Bragg confined modes
- 2008Modified permittivity observed in bulk gallium arsenide and gallium phosphide samples at 50 K using the whispering gallery mode methodcitations
- 2008Use of Whispering-Gallery Modes and Quasi- Modes for Broadband Characterization of Bulk Gallium Arsenide and Gallium Phosphide Samplescitations
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article
Modified permittivity observed in bulk gallium arsenide and gallium phosphide samples at 50 K using the whispering gallery mode method
Abstract
Whispering gallery modes in bulk cylindrical gallium arsenide and gallium phosphide samples have been examined both in darkness and under white light at 50 nbsp;K. In both samples we observed change in permittivity under light and dark conditions. This results from a change in the polarization state of the semiconductor, which is consistent with a free electron-hole creation/recombination process. The permittivity of the semiconductor is modified by free photocarriers in the surface layers of the sample which is the region sampled by whispering gallery modes.