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Jolley, G.
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article
Two-color InGaAsGaAs quantum dot infrared photodetectors by selective area interdiffusion
Abstract
<p>We report the postgrowth fabrication of two-color InGaAsGaAs quantum dot infrared photodetectors (QDIPs). By capping half of the as-grown QDIP structure with titanium dioxide (Ti O2) and performing rapid thermal annealing under the optimized condition, a blueshifted photoluminescence from the uncapped region was obtained compared with the Ti O2 covered region. The corresponding device spectral photoresponse from the two adjacent regions exhibited a shift of 0.8 μm around the wavelength of 6 μm. This is a result of the simultaneous promotion and suppression of thermal interdiffusion during rapid thermal annealing.</p>