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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sharp, I. D.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2008Nonmagnetic compensation in ferromagnetic Ga1-x Mnx As and Ga1-xMnx P synthesized by ion implantation and pulsed-laser meltingcitations
- 2007Superheating and supercooling of Ge nanocrystals embedded in SiO 2citations
- 2007Synthesis and optical properties of multiband III-V semiconductor alloyscitations
- 2006Multiband GaNAsP quaternary alloyscitations
- 2005A chemical approach to 3-D lithographic patterning of Si and Ge nanocrystals
- 2004Characterization and manipulation of exposed Ge nanocrystals
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article
Nonmagnetic compensation in ferromagnetic Ga1-x Mnx As and Ga1-xMnx P synthesized by ion implantation and pulsed-laser melting
Abstract
The electronic and magnetic effects of intentional compensation with nonmagnetic donors are investigated in the ferromagnetic semiconductors Ga1-x Mnx As and Ga1-x Mnx P synthesized using ion implantation and pulsed-laser melting. It is demonstrated that compensation with nonmagnetic donors and MnI have similar qualitative effects on materials properties. With compensation TC decreases, resistivity increases, and stronger magnetoresistance and anomalous Hall effect attributed to skew scattering are observed. Ga1-x Mnx As can be controllably compensated with Te through a metal-insulator transition through which the magnetic and electrical properties vary continuously. The resistivity of insulating Ga1-x Mnx As:Te can be described by thermal activation to the mobility edge and simply activated hopping transport. Ga1-x Mnx P doped with S is insulating at all compositions but shows decreasing TC with compensation. The existence of a ferromagnetic insulating state in Ga1-x Mnx As:Te and Ga1-x Mnx P:S having TC 's of the same order as the uncompensated materials demonstrates that localized holes are effective at mediating global ferromagnetism in ferromagnetic semiconductors through the percolation of ferromagnetic "puddles" at low temperatures. © 2008 American Institute of Physics.