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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Saucedo, E.
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Publications (8/8 displayed)
- 2024CuFeS2/Cu2S/FeS2 Composite to Increase the Performance of Thin-Film Thermoelectric Generators Based on Sustainable Materialscitations
- 2023Challenges and improvement pathways to develop quasi-1D (Sb1-xBix)2Se3-based materials for optically tuneable photovoltaic applications. Towards chalcogenide narrow-bandgap devicescitations
- 2022Small Atom Doping: A Synergistic Strategy to Reduce SnZn Recombination Center Concentration in Cu2ZnSnSe4citations
- 2022A new approach for alkali incorporation in Cu 2 ZnSnS 4 solar cellscitations
- 2022A new approach for alkali incorporation in Cu2ZnSnS4 solar cellscitations
- 2016Detrimental effect of Sn-rich secondary phases on Cu2ZnSnSe4 based solar cellscitations
- 2016The importance of back contact modification in Cu2ZnSnSe4 solar cells: The role of a thin MoO2 layercitations
- 2008Investigation of the origin of deep levels in CdTe doped with Bicitations
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article
Investigation of the origin of deep levels in CdTe doped with Bi
Abstract
Combining optical (low temperature photoluminescence), electrical (thermoelectric effect spectroscopy), and structural (synchrotron X-ray powder diffraction) methods, the defect structure of CdTe doped with Bi was studied in crystals with dopant concentration in the range of 1017–1019 at./cm3. The semi-insulating state observed in crystals with low Bi concentration is assigned to the formation of a shallow donor level and a deep donor recombination center. Studying the evolution of lattice parameter with temperature, we postulate that the deep center is formed by a Te–Te dimer and their formation is explained by a tetrahedral to octahedral distortion, due to the introduction of Bi in the CdTe lattice. We also shows that this model agrees with the electrical, optical, and transport charge properties of the samples. ; This work has been partly supported by the projects CAM SENSORCDT S-0505/MAT/0209, CAM FOTOFLEX S-0505/ENE-123, and EU FP6 PHOLOGIC 017158. The authors are grateful to the European Synchrotron Radiation Facility (ESRF) for the experiments HS-3183 and HS-3184 and to Dr. German Castro. E.S. also thanks to the MEC of Spain for the fellowship FPU 2003-1388. ; Peer reviewed