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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Wuttig, Matthias
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (39/39 displayed)
- 2024Ostwald Ripening of Ag<sub>2</sub>Te Precipitates in Thermoelectric PbTe: Effects of Crystallography, Dislocations, and Interatomic Bondingcitations
- 2024Metavalent or Hypervalent Bonding:Is There a Chance for Reconciliation?citations
- 2024Ostwald Ripening of Ag2Te precipitates in thermoelectric PbTe: effects of crystallography, dislocations, and interatomic bondingcitations
- 2024Metavalent or Hypervalent Bondingcitations
- 2023A Quantitative Investigation of Functionalized Glazing Stacks by Atom Probe Tomographycitations
- 2023Amorphous and highly nonstoichiometric titania (TiOx) thin films close to metal-like conductivity
- 2023Metavalent or Hypervalent Bonding: Is There a Chance for Reconciliation?citations
- 2022Scaling and Confinement in Ultrathin Chalcogenide Films as Exemplified by GeTecitations
- 2022Nanostructured In3SbTe2 antennas enable switching from sharp dielectric to broad plasmonic resonances
- 2022Halide Perovskites: Advanced Photovoltaic Materials Empowered by a Unique Bonding Mechanismcitations
- 2022Nanostructured In<sub>3</sub>SbTe<sub>2</sub> antennas enable switching from sharp dielectric to broad plasmonic resonancescitations
- 2022The glass transition of water, insight from phase change materialscitations
- 2022Nanostructured In 3 SbTe 2 antennas enable switching from sharp dielectric to broad plasmonic resonancescitations
- 2022Fragile-to-Strong Transition in Phase-Change Material Ge 3 Sb 6 Te 5citations
- 2021Phase Change Memory Materials by Design
- 2021Metavalent Bonding in Phase Change Materials:Provocation or Promise?
- 2021Combining switchable phase‐change materials and phase‐transition materials for thermally regulated smart mid‐infrared modulatorscitations
- 2021The potential of chemical bonding to design crystallization and vitrification kineticscitations
- 2021Halide Perovskites: Advanced Photovoltaic Materials Empowered by a Unique Bonding Mechanism
- 2021Metavalent Bonding in Solids: Provocation or Promise?
- 2021Non-volatile photonic Applications with Phase Change Materials
- 2021Approaching the Glass Transition Temperature of GeTe by Crystallizing Ge 15 Te 85citations
- 2021Metavalent Bonding in Crystalline Solids: How Does It Collapse?citations
- 2021Metavalent Bonding in Crystalline Solids: How Does It Collapse?citations
- 2021Approaching the Glass Transition Temperature of GeTe by Crystallizing Ge<sub>15</sub>Te<sub>85</sub>citations
- 2020Violation of the Stokes–Einstein relation in Ge2Sb2Te5, GeTe, Ag4In3Sb67Te26, and Ge15Sb85, and its connection to fast crystallizationcitations
- 2020Changes of structure and bonding with thickness in chalcogenide thin filmscitations
- 2019Switching between Crystallization from the Glassy and the Undercooled Liquid Phase in Phase Change Material Ge 2 Sb 2 Te 5citations
- 2019Role of grain boundaries in Ge–Sb–Te based chalcogenide superlatticescitations
- 2019Persistence of spin memory in a crystalline, insulating phase-change materialcitations
- 2018Unique Bond Breaking in Crystalline Phase Change Materials and the Quest for Metavalent Bondingcitations
- 2018Atomic disordering processes in crystalline GeTe induced by ion irradiationcitations
- 2017Formation of resonant bonding during growth of ultrathin GeTe filmscitations
- 2016Interband characterization and electronic transport control of nanoscaled GeTe/Sb2Te3 superlatticescitations
- 2016Ordered Peierls distortion prevented at growth onset of GeTe ultra-thin filmscitations
- 2014Amorphous and highly nonstoichiometric titania (TiOx) thin films close to metal-like conductivitycitations
- 2012Role of vacancies in metal-insulator transitions of crystalline phase-change materialscitations
- 2011The influence of a temperature dependent band gap on the energy scale of modulated photocurrent experimentscitations
- 2008Investigation of SnSe, SnSe2, and Sn2Se3 alloys for phase change memory applicationscitations
Places of action
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article
Investigation of SnSe, SnSe2, and Sn2Se3 alloys for phase change memory applications
Abstract
<jats:p>SnSe, SnSe2, and Sn2Se3 alloys have been studied to explore their suitability as new phase change alloys for electronic memory applications. The temperature dependence of the structural and electrical properties of these alloys has been determined and compared with that of GeTe. A large electrical resistance contrast of more than five orders of magnitude is achieved for SnSe2 and Sn2Se3 alloys upon crystallization. X-ray diffraction measurements show that the transition in sheet resistance is accompanied by crystallization. The activation energy for crystallization of SnSe, SnSe2, and Sn2Se3 has been determined. The microstructure of these alloys has been investigated by atomic force microscopy measurements. X-ray reflection measurements reveal density increases of 5.0%, 17.0%, and 9.1% upon crystallization for the different alloys.</jats:p>