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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Tuboltsev, Vladimir
University of Helsinki
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2024Unravelling the effect of nitrogen on the morphological evolution of thin silver films on weakly-interacting substratescitations
- 2018Metallization of self-assembled organic monolayer surfaces by Pd nanocluster depositioncitations
- 2016Electric and Magnetic Properties of ALD-Grown BiFeO3 Filmscitations
- 2008Electron-phonon coupling in ion implanted cobalt silicide below 1 Kcitations
- 2007Critical temperature modification of low dimensional superconductors by spin dopingcitations
- 2005Superconductivity suppression in Fe-implanted thin Al filmscitations
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article
Electron-phonon coupling in ion implanted cobalt silicide below 1 K
Abstract
Cobalt silicide is a popular compound in semiconductor technology for fabricating resistive microcomponents and metallization. In advanced silicon-based cryogenic devices, such as radiation detectors and coolers, the electronic energy distribution is fundamentally determined by the thermal state of the mesoscopic system. In this work, electron-phonon heat transport at cryogenic temperatures was studied in a silicide formed by high fluence ion implantation of Co into Si. A heat flow between electrons and phonons was found to be proportional to (T-el(p)-T-ph(p)) with p=3.3. The electron-phonon coupling constant that characterizes the thermal resistance between electrons and phonons was derived from the power dependence of the electron temperature measured well bellow 1 K. The constant was found to be temperature dependent in the implanted cobalt silicide. (c) 2008 American Institute of Physics.