| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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De Groot, Cornelis
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (41/41 displayed)
- 2022Vertical and Lateral Electrodeposition of 2D Material Heterostructures
- 20222D material based optoelectronics by electroplating
- 2022Room temperature phase transition of W-doped VO2 by atomic layer deposition on 200 mm Si wafers and flexible substratescitations
- 2021Low pressure CVD of GeE (E = Te, Se, S) thin films from alkylgermanium chalcogenolate precursors and effect of the deposition temperature on the thermoelectric performance of GeTecitations
- 2021Low temperature CVD of thermoelectric SnTe thin films from the single source precursor, [nBu3Sn(TenBu)]citations
- 2021Tungsten disulfide thin films via electrodeposition from a single source precursorcitations
- 2021Lateral growth of MoS2 2D material semiconductors over an insulator via electrodepositioncitations
- 2020Large-area electrodeposition of few-layer MoS2 on graphene for 2D material heterostructurescitations
- 2020Thermoelectric properties of bismuth telluride thin films electrodeposited from a non-aqueous solutioncitations
- 2020Selective chemical vapor deposition approach for Sb2Te3 thin film micro-thermoelectric generatorscitations
- 2020Improved thermoelectric performance of Bi2Se3 alloyed Bi2Te3 thin films via low pressure chemical vapour depositioncitations
- 2020Electrodeposition of MoS2 from dichloromethanecitations
- 2019Electrodeposition of bismuth telluride from a weakly coordinating, non-aqueous solutioncitations
- 2018Towards a 3D GeSbTe phase change memory with integrated selector by non-aqueous electrodepositioncitations
- 2018Electrodeposition of a functional solid state memory material – germanium antimony telluride from a non-aqueous plating bathcitations
- 2017Selection by current compliance of negative and positive bipolar resistive switching behaviour in ZrO2−x/ZrO2 bilayer memorycitations
- 2016Forming-free resistive switching of tunable ZnO films grown by atomic layer depositioncitations
- 2016Nanoscale arrays of antimony telluride single crystals by selective chemical vapor depositioncitations
- 2015Chemical vapour deposition of antimony chalcogenides with positional and orientational control: precursor design and substrate selectivitycitations
- 2015Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge2Sb2Te5phase change memorycitations
- 2015Phase-change memory properties of electrodeposited Ge-Sb-Te thin filmcitations
- 2014The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devicescitations
- 2013Non-aqueous electrodeposition of metals and metalloids from halometallate saltscitations
- 2013Low pressure chemical vapour deposition of crystalline Ga2Te3 and Ga2Se3 thin films from single source precursors using telluroether and selenoether complexescitations
- 2012Highly selective chemical vapor deposition of tin diselenide thin films onto patterned substrates via single source diselenoether precursorscitations
- 2012Low power hydrogen gas sensors using electrodeposited PdNi-Si Schottky diodescitations
- 2011Metal catalyst-free growth of carbon nanotubes and their application in field effect transitors
- 2011Metal-catalyst-free growth of carbon nanotubes and their application in field-effect transistors
- 2010Fabrication and simulation of nanostructures for domain wall magnetoresistance studies on nickelcitations
- 2010Chemical Vapour Deposition of CNTs Using Structural Nanoparticle Catalysts
- 2009Growth of single-walled carbon nanotubes using germanium nanocrystals formed by implantationcitations
- 2009Inhomogeneous Ni/Ge Schottky barriers due to variation in Fermi-level pinning
- 2008Numerical investigation of domain walls in constrained geometriescitations
- 2008Fabrication of Nano-Structured Gold Arrays by Guided Self-assembly for Plasmonics
- 2007A study on Ge based spin-LED for spintronic applications.
- 2006The structural and electrical properties of thermally grown TiO2 thin films
- 2006Enhancement of resistivity of Czochralski silicon by deep level manganese dopingcitations
- 2006Orientation and symmetry control of inverse sphere magnetic nanoarrays by guided self-assemblycitations
- 2005Shape-induced anisotropy in antidot arrays from self-assembled templatescitations
- 2005Metal catalyst-free low-temperature carbon nanotube growth on SiGe islandscitations
- 2005Catalyst free low temperature direct growth of carbon nanotubes on SiGe islands and Ge quantum dots
Places of action
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article
Numerical investigation of domain walls in constrained geometries
Abstract
In recent years, magnetic domain wall structures in ferromagnetic nanowires have attracted growing attention, opening paths to develop novel devices which exploit magnetoresistive effects. A reduction of the domain wall length in geometrically constrained areas has been predicted and observed. In this article, we consider a rectangular constriction (width s<sub>0</sub>, length 2d<sub>0</sub>) in form of a thin film, attached to a rectangular pad (width s1) on either side. The material considered is Ni (M<sub>s</sub> = 490 kA/m) with a weak in-plane anisotropy (K<sub>1</sub> = 2000 J/m<sup>3</sup>). We investigate the dependence of the domain wall length as a function of the constriction geometry. Micromagnetic simulations are used to systematically study the head-to-head domain walls between head-to-head domains (case A) and N´eel walls between sidewise domain orientations (case B). We present the resulting domain wall length <i>w</i> as a function of 2d<sub>0</sub> and s<sub>0</sub> and analyze the magnetization patterns. A reduction of the domain wall length to below 11nm is found (where the corresponding unconstrained domain wall length is 69nm). For constriction lengths above a critical value (case B only), the single 180 domain wall splits into two 90 domain walls.