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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Berger, Paul R.
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Topics
Publications (16/16 displayed)
- 2022Flexible Polymer Rectifying Diode on Plastic Foils with MoO3Hole Injection
- 2021Selective atomic layer deposition on flexible polymeric substrates employing a polyimide adhesive as a physical maskcitations
- 2021Selective atomic layer deposition on flexible polymeric substrates employing a polyimide adhesive as a physical maskcitations
- 2020RTD Light Emission around 1550 nm with IQE up to 6% at 300 Kcitations
- 20190.7-GHz Solution-Processed Indium Oxide Rectifying Diodescitations
- 2019930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire templatecitations
- 2017High performance, Low-voltage, Solution-processable Indium Oxide Thin Film Transistors using Anodic Al2O3 Gate Dielectric.
- 2017Negative differential resistance in polymer tunnel diodes using atomic layer deposited, TiO2 tunneling barriers at various deposition temperaturescitations
- 2012200-mm CVD grown Si/SiGe resonant interband tunnel diodes optimized for high peak-to-valley current ratios
- 2011Interfacial design and structure of protein/polymer films on oxidized AlGaN surfacescitations
- 2010Plasma-polymerized multistacked bipolar gate dielectric for organic thin-film transistorscitations
- 20084.8% efficient poly(3-hexylthiophene)-fullerene derivative (1:0.8) bulk heterojunction photovoltaic devices with plasma treated Ag Ox /indium tin oxide anode modificationcitations
- 2008Enhanced emission using thin Li-halide cathodic interlayers for improved injection into poly(p-phenylene vinylene) derivative PLEDscitations
- 2008Plasma-polymerized multistacked organic bipolar filmscitations
- 2006Low sidewall damage plasma etching using ICP-RIE with HBr chemistry of Si/SiGe resonant interband tunnel diodescitations
- 2000Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealingcitations
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article
4.8% efficient poly(3-hexylthiophene)-fullerene derivative (1:0.8) bulk heterojunction photovoltaic devices with plasma treated Ag Ox /indium tin oxide anode modification
Abstract
<p>We report here an improved efficiency, up to 4.8% with a high fill factor of ∼63% under AM 1.5G spectral illumination and 100 mW cm2 intensity, for poly(3-hexylthiophene) and [6,6]-phenyl C61 butyric acid methyl ester bulk heterojunction photovoltaic (PV) devices with a 1:0.8 weight ratio using surface modifications to the indium tin oxide (ITO) anodes through plasma oxidized silver. Here, an enhanced short-circuit current density was achieved without significant loss in the open-circuit voltage (>0.6 V) nor the fill factor (>63%), leading to an efficiency jump from 4.4% in the control devices to 4.8% with the surface modified ITO anode. The enhanced short-circuit density is attributed to an interface energy step between the ITO and the polymer hole transporting layer. It has been theorized that the introduction of an interface energy step could alter the charge collection efficiency, resulting in an improved overall efficiency in PV devices. In our study, the current density-voltage characteristics under darkness clearly show an increased current density, especially under forward bias, for the anode treated cell, suggesting the presence of an interface energy step between the ITO and the hole transporting layer with surface modified ITO anodes.</p>