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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Keating, Adrian
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Publications (7/7 displayed)
- 2022Determination of thermal conductivity, thermal diffusivity and specific heat capacity of porous silicon thin films using the 3ω methodcitations
- 2022Analytic approximation for the collapse of viscous tubes driven by surface tension and pressure difference
- 2019Compensating porosity gradient to produce flat, micromachined porous silicon structurescitations
- 2018MEMS-based Low SWaP solutions for multi/hyperspectral infrared sensing and imagingcitations
- 2016A collaborative data library for testing prognostic models
- 2009Low temperature N2-based passivation technique for porous silicon thin filmscitations
- 2007Process condition dependence of mechanical and physical properties of silicon nitride thin filmscitations
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article
Process condition dependence of mechanical and physical properties of silicon nitride thin films
Abstract
This study uses a resonance method to determine Young's modulus (E), shear modulus (G), and Poisson's ratio (nu) of plasma-enhanced chemical vapor deposited silicon nitride (SiNxHy) thin films deposited under varying process conditions. The resonance method involves exciting the bending and torsional vibration modes of a microcantilever beam fabricated from a film. The E and G values can be extracted directly from the bending and torsional vibration modes, and the nu value can be determined from the calculated E and G values. The density (rho) of the films was determined using a quartz crystal microbalance method. In order to determine the validity of the resonance method, finite element modeling was used to determine its dependence on microcantilever beam dimensions. Over a deposition temperature range of 100-300 degrees C, measured E, G, and nu values varied within 54-193 GPa, 22-77 GPa, and 0.20-0.26 with changes in process conditions, respectively. Over the same deposition range, measured rho values varied within 1.55-2.80 g/cm(3) with changes in process conditions.