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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Dell, John
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Topics
Publications (20/20 displayed)
- 2017Large-Area MEMS Tunable Fabry-Perot Filters for Multi/Hyperspectral Infrared Imagingcitations
- 2016Preparation and characterization of cerium substituted bismuth dysprosium iron garnets for magneto-optic applicationscitations
- 2015Investigation of ICPECVD Silicon Nitride Films for HgCdTe Surface Passivationcitations
- 2014Characterization of mechanical, optical and structural properties of bismuth oxide thin films as a write-once medium for blue laser recordingcitations
- 2014Characterization of mechanical, optical and structural properties of bismuth oxide thin films as a write-once medium for blue laser recording
- 2014Investigation of cerium-substituted europium iron garnets deposited by biased target ion beam depositioncitations
- 2014GaSb: A new alternative substrate for epitaxial growth of HgCdTecitations
- 2011Thermally induced damages of PECVD SiNx thin filmscitations
- 2007Dielectric thin films for MEMS-based optical sensorscitations
- 2007Poisson's Ratio of Low-Temperature PECVD Silicon Nitride Thin Filmscitations
- 2007Process condition dependence of mechanical and physical properties of silicon nitride thin filmscitations
- 2006Thermal Stability of PECVD SiN/sub x/ Filmscitations
- 2006Effect of oxidation on the chemical bonding structure of PECVD SiN thin filmscitations
- 2006Stress in low-temperature plasma enhanced chemical vapour deposited silicon nitride thin filmscitations
- 2005Characterization of Mechanical Properties of Silicon Nitride Thin Films for MEMS Devices by Nanoindentation
- 2005Effects of deposition temperature on the mechanical and physical properties of silicon nitride thin filmscitations
- 2005Determination of mechanical properties of PECVD silicon nitride thin films for tunable MEMS Fabry-Perot optical filterscitations
- 2005Evaluation of Plasma Deposited Silicon Nitride Thin Flims for Microsystems Technologycitations
- 2004Laser-Beam-Induced Current Mapping of Spatial Nonuniformities in Molecular Beam Epitaxy As-Grown HgCdTecitations
- 2004Dark Currents in Long Wavelength Infrared HgCdTe Gated Photodiodescitations
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article
Process condition dependence of mechanical and physical properties of silicon nitride thin films
Abstract
This study uses a resonance method to determine Young's modulus (E), shear modulus (G), and Poisson's ratio (nu) of plasma-enhanced chemical vapor deposited silicon nitride (SiNxHy) thin films deposited under varying process conditions. The resonance method involves exciting the bending and torsional vibration modes of a microcantilever beam fabricated from a film. The E and G values can be extracted directly from the bending and torsional vibration modes, and the nu value can be determined from the calculated E and G values. The density (rho) of the films was determined using a quartz crystal microbalance method. In order to determine the validity of the resonance method, finite element modeling was used to determine its dependence on microcantilever beam dimensions. Over a deposition temperature range of 100-300 degrees C, measured E, G, and nu values varied within 54-193 GPa, 22-77 GPa, and 0.20-0.26 with changes in process conditions, respectively. Over the same deposition range, measured rho values varied within 1.55-2.80 g/cm(3) with changes in process conditions.