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| Naji, M. |
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| Motta, Antonella |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Petrov, R. H. | Madrid |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Yang, D.
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Topics
Publications (10/10 displayed)
- 2024Improving the interfacial adhesion between recycled carbon fibres and polyphenylene sulphide by bio-inspired dopamine for advanced composites manufacturing
- 2024Investigation of the Dynamic Behaviour of H2 and D2 in a Kinetic Quantum Sieving System
- 2020Efficient light-emitting diodes from mixed-dimensional perovskites on a fluoride interfacecitations
- 2014Micromechanical experimental investigation of mudstonescitations
- 2011Carrier lifetime studies in diode structures on Si substrates with and without Ge dopingcitations
- 2010Designing for reliability using a new Wafer Level Package structure
- 2008Die Fracture Probability Prediction and Design Guidelines for Laminate-Based Over-Molded Packages
- 2007Multifunctional Nanocrystalline Thin Films of Er2O3: Interplay between Nucleation Kinetics and Film Characteristicscitations
- 2007Effect of filler concentration of rubbery shear and bulk modulus of molding compounds
- 2007Er2O3 as a high-K dielectric candidatecitations
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article
Er2O3 as a high-K dielectric candidate
Abstract
Erbium oxide (Er2O3) films have been deposited by metal organic chemical vapor deposition on Si(001) using tris(isopropylcyclopentadienyl)erbium. The impact of Si surface passivation by the metal organic prior growth initiation was investigated. The correlation between the Er2O3 films structure, the optical response, the static dielectric constant (K), and density of interface traps is discussed. An Er-silicate interfacial layer with a thickness of 1.5 nm, a static dielectric constant of 10-12.4, and a density of interface traps of 4.2x10(10) cm(2) eV(-1) measured for a film with a physical thickness of 8.2 nm (with an equivalent oxide thickness of 2.7 nm) render Er2O3 an interesting candidate as a high-K dielectric.(c) 2007 American Institute of Physics.