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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Forrest, Stephen R.
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Publications (6/6 displayed)
- 2009Open circuit voltage enhancement due to reduced dark current in small molecule photovoltaic cellscitations
- 2007Photophysics of Pt-porphyrin electrophosphorescent devices emitting in the near infraredcitations
- 2007Real-time monitoring of organic vapor-phase deposition of molecular thin films using high-pressure reflection high-energy electron diffractioncitations
- 2007Gallium-doped zinc oxide films as transparent electrodes for organic solar cell applicationscitations
- 2006High mobility nanocrystalline silicon transistors on clear plastic substratescitations
- 2003Operational stability of electrophosphorescent devices containing p and n doped transport layerscitations
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article
Gallium-doped zinc oxide films as transparent electrodes for organic solar cell applications
Abstract
<jats:p>We report microstructural characteristics and properties of gallium-doped ZnO films deposited on glass by pulsed laser deposition. The Zn0.95Ga0.05O film deposited at 200 °C and 1×10−3 Torr showed predominant ⟨0001⟩ orientation with a metallic behavior and a resistivity of 2×10−4 Ω cm at room temperature. Low resistivity of the ZnGaO films has been explained in terms of optimal combination of carrier concentration and minimized scattering, and is correlated with the microstructure and the deposition parameters. Power conversion efficiency comparable to indium tin oxide-based devices (1.25±0.05%) is achieved on a Zn0.95Ga0.05O∕Cu-phthalocyanine∕C60 double-heterojunction solar cell.</jats:p>