| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Wen, Xiaoming
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Publications (7/7 displayed)
- 2024Activated charcoal-mediated non-contact carbothermal reduction of TiO2 for controlled synthesis of Magnéli phase titanium suboxidescitations
- 2017Spatial distribution of lead iodide and local passivation on organo-lead halide perovskitecitations
- 2017Inverted Hysteresis in CH3NH3PbI3 Solar Cellscitations
- 2016Extended hot carrier lifetimes observed in bulk In0.265±0.02Ga0.735N under high-density photoexcitationcitations
- 2015Effect of blend composition on binary organic solar cells using a low band gap polymercitations
- 2009Thermal quenching of photoluminescence in ZnO/ZnMgO multiple quantum wells following oxygen implantation and rapid thermal annealingcitations
- 2007Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnOZnMgO multiple quantum wellscitations
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article
Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnOZnMgO multiple quantum wells
Abstract
<p>The authors investigate the effect of oxygen implantation and rapid thermal annealing in ZnOZnMgO multiple quantum wells using photoluminescence. A blueshift in the photoluminescence is observed in the implanted samples. For a low implantation dose, a significant increase of activation energy and a slight increase of the photoluminescence efficiency are observed. This is attributed to the suppression of the point defect complexes and transformation between defect structures by implantation and subsequent rapid thermal annealing. A high dose of implantation leads to lattice damage and agglomeration of defects leading to large defect clusters, which result to an increase in nonradiative recombination.</p>