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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kanicki, Jerzy
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Publications (3/3 displayed)
- 2017Reflective Electrochromic Device with Gelatin-Nanocomposite Electrolyte
- 2013High efficiency Cu (In, Ga) Se2 flexible solar cells fabricated by roll-to-roll metallic precursor co-sputtering methodcitations
- 2007Polycrystalline tetrabenzoporphyrin organic field-effect transistors with nanostructured channelscitations
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article
Polycrystalline tetrabenzoporphyrin organic field-effect transistors with nanostructured channels
Abstract
<jats:p>Solution-processed organic thin-film field-effect transistors (OFETs) were fabricated using a precursor form of the organic semiconductor tetrabenzoporphyrin (TBP) deposited on a thermal silicon oxide gate insulator patterned with nanometer-scale trenches. Thermal conversion of the precursor film to TBP was enhanced by ordered TBP aggregation in the prepatterned trenches, demonstrating precise control and placement of long- and short-range ordering of the organic semiconductor. OFETs with channels parallel to trench direction growth were found to have field-effect mobility approaching one order of magnitude greater than transistors fabricated with the channel oriented perpendicular to dendrimer growth.</jats:p>