| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Farshchi, R.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2009Structural, magnetic, and transport properties of laser-annealed GaAscitations
- 2008Electrical transport and ferromagnetism in Ga1-x Mnx As synthesized by ion implantation and pulsed-laser meltingcitations
- 2007Synthesis and optical properties of multiband III-V semiconductor alloyscitations
- 2007Synthesis of highly mismatched alloys using ion implantation and pulsed laser meltingcitations
- 2006Multiband GaNAsP quaternary alloyscitations
- 2006Doping and defect control of ferromagnetic semiconductors formed by ion implantation and pulsed-laser meltingcitations
Places of action
| Organizations | Location | People |
|---|
document
Synthesis and optical properties of multiband III-V semiconductor alloys
Abstract
Quaternary GaN<sub>x</sub>As<sub>1-y</sub>P<sub>y</sub> alloys have been synthesized using N ion implantation into GaAs<sub>1-y</sub>P<sub>y</sub> (y=0-0.4) epilayers followed by pulsed laser melting (II-PLM). We observed strong optical transitions from the valence band to both the lower (E <sub>-</sub>) and upper (E<sub>+</sub>) conduction subbands that arise from the N induced splitting of the conduction band (E<sub>M</sub>) of the GaAs <sub>1-y</sub>P<sub>y</sub> host. As predicted by the band anticrossing model, GaN<sub>x</sub>As<sub>1-xy</sub>P<sub>y</sub> with y>0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells. © 2007 American Institute of Physics.