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document
Sharp Interfacial Structure of InAs/InP Quantum Dots Grown by a Double-Cap Method: A Cross-Sectional Scanning Tunneling Microscopy Study
Abstract
Interfacial properties of InAs quantum dots (QDs) grown by a double-cap method in metalorganic chemical vapor deposition have been investigated by cross-sectional scanning tunneling microscopy (XSTM). XSTM images reveal that top and bottom interfaces of the InAs QD are extremely sharp. QDs with a monolayer-stepped height in the range 6-14 ML are observed, which indicates that the double-cap method can produce QDs with a well-defined height....