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Zhuang, Qiandong
Lancaster University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2017Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dotscitations
- 2017Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots
- 2015In(AsN) mid-infrared emission enhanced by rapid thermal annealingcitations
- 2014The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxycitations
- 2014The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxycitations
- 2014Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxycitations
- 2013Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stackscitations
- 2011Photoreflectance study of N- and Sb-related modifications of the energy gap and spin-orbit splitting in InNAsSb alloyscitations
- 2009Effect of low nitrogen concentrations on the electronic properties of InAs1-xNx.citations
- 2007Strain enhancement during annealing of GaAsN alloys.citations
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article
Strain enhancement during annealing of GaAsN alloys.
Abstract
We have investigated the effect of rapid thermal annealing (RTA) on the optical and structural properties of GaAsN alloys using photoluminescence (PL) and double-crystal x-ray diffraction. We observe a significant anomalous strain enhancement during RTA and a blueshift of the PL peak energy accompanied by a reduction in the emission linewidth. The PL features are attributed to an improvement in the homogeneity of the alloy, and the strain enhancement reflects a change in N-related complexes during annealing. Based on a defect model, an interstitial nitrogen concentration of 1.8×1019 cm−3 is deduced prior to annealing.