People | Locations | Statistics |
---|---|---|
Naji, M. |
| |
Motta, Antonella |
| |
Aletan, Dirar |
| |
Mohamed, Tarek |
| |
Ertürk, Emre |
| |
Taccardi, Nicola |
| |
Kononenko, Denys |
| |
Petrov, R. H. | Madrid |
|
Alshaaer, Mazen | Brussels |
|
Bih, L. |
| |
Casati, R. |
| |
Muller, Hermance |
| |
Kočí, Jan | Prague |
|
Šuljagić, Marija |
| |
Kalteremidou, Kalliopi-Artemi | Brussels |
|
Azam, Siraj |
| |
Ospanova, Alyiya |
| |
Blanpain, Bart |
| |
Ali, M. A. |
| |
Popa, V. |
| |
Rančić, M. |
| |
Ollier, Nadège |
| |
Azevedo, Nuno Monteiro |
| |
Landes, Michael |
| |
Rignanese, Gian-Marco |
|
Evans, Keith
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2014Investigating the medium range order in amorphous Ta 2 O 5 coatingscitations
- 2008Growth and Characterization of High-Performance GaN and AlxGa1-xN Ultraviolet Avalanche Photodiodes Grown on GaN Substratescitations
- 2008Formation, etching and electrical characterization of a thermally grown gallium oxide on the Ga-face of a bulk GaN substratecitations
- 2007A1(x)Ga(1-x)N ultraviolet avalanche photodiodes grown on GaN substratescitations
- 2007Fabrication and device characteristics of Schottky-type bulk GaN-based "visible-blind" ultraviolet photodetectorscitations
Places of action
Organizations | Location | People |
---|
article
Fabrication and device characteristics of Schottky-type bulk GaN-based "visible-blind" ultraviolet photodetectors
Abstract
<p>The authors present the fabrication and characterization of vertical-geometry Schottky-type ultraviolet (UV) photodetectors based on a bulk n-GaN substrate. By using low temperature rapid thermal annealing of the semitransparent Schottky contacts (nickel with 7% vanadium), they obtained an ultralow dark current of 0.56 pA at -10 V reverse bias. A responsivity of similar to 0.09 A/W at zero bias was measured for wavelength shorter than the absorption edge of GaN, and it was found to be independent of the incident power in the range measured (50 mW/m(2)-2.2 kW/m(2)). The devices are visible blind, with an UV/visible contrast of over six orders of magnitude. An open-circuit voltage of 0.3 V was also obtained under a broadband UV illumination. (c) 2007 American Institute of Physics.</p>