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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Buda, M.
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Topics
Publications (9/9 displayed)
- 2017The effect of rapid thermal annealing to device performance of InGaAs/AlGaAs quantum well laser diodes
- 2008Self-sustained output power pulsations in InGaAs quantum dot ridge-waveguide laserscitations
- 2007Modeling and characterization of InAsGaAs quantum dot lasers grown using metal organic chemical vapor depositioncitations
- 2006Observation of blue shifts in ZnO/ZnMgO multiple quantum well structures by ion-implantation induced intermixingcitations
- 2006Effect of rapid thermal annealing on the atomic intermixing of Zn- and C-doped InGaAs/AlGaAs quantum well laser structurescitations
- 2004Characteristics of MOCVD-Grown thin p-clad InGaAs quantum-dot laserscitations
- 2003Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetectorcitations
- 2003Low loss, thin p-clad 980-nm InGaAs semiconductor laser diodes with an asymmetric structure designcitations
- 2003Improvement of the Kink-Free Operation in Ridge-Waveguide Laser Diodes Due to Coupling of the Optical Field to the Metal Layers Outside the Ridgecitations
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article
Modeling and characterization of InAsGaAs quantum dot lasers grown using metal organic chemical vapor deposition
Abstract
<p>We report on the lasing characteristics of three- and five-stack InAsGaAs quantum dot (QD) lasers grown by metal organic chemical vapor deposition. By increasing the number of stacked dot layers to 5, lasing was achieved from the ground state at 1135 nm for device lengths as short as 1.5 mm (no reflectivity coatings). The unamplified spontaneous emission and Z ratio as a function of injection current were also investigated. While the five-stack QD lasers behaved as expected with Z ratios of ≈2 prior to lasing, the three-stack QD lasers, which lased from the excited state, exhibited Z -ratio values as high as 4. A simple model was developed and indicated that high Z ratios can be generated by three nonradiative recombination pathways: (i) high monomolecular recombination within the wetting layer, (ii) Auger recombination involving carriers within the QDs ("unmixed" Auger), and (iii) Auger recombination involving both the QD and wetting layer states ("mixed" Auger), which dominate once the excited and wetting layer states become populated.</p>