| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Guedj, Cyril
CEA LETI
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2023Homo-epitaxial growth of LiNbO3 thin films by Pulsed Laser depositioncitations
- 2019Atomistic modelling of diamond-type Si x Ge y C z Sn1− x − y − z crystals for realistic transmission electron microscopy image simulations
- 2019Atomistic modelling of diamond-type Si<i>x</i>Ge<i>y</i>C<i>z</i>Sn1−<i>x</i>−<i>y</i>−<i>z</i> crystals for realistic transmission electron microscopy image simulations
- 2018Impact of Hydrogen on Graphene-based Materials: Atomistic Modeling and Simulation of HRSTEM Images
- 2016Measurement of energy‐loss anisotropy along [001] in monoclinic hafnia and comparison with ab‐initio simulations
- 2014Evidence for anisotropic dielectric properties of monoclinic hafnia using valence electron energy-loss spectroscopy in high-resolution transmission electron microscopy and <i>ab initio</i> time-dependent density-functional theorycitations
- 2013Measurement of Complex Conductance in the PHz Frequency Range with Subnanometric Spatial Resolution: Application to the Grain Boundary of Monoclinic Hafniacitations
- 2008Evaluation of ellipsometric porosimetry for in‐line characterization of ultra low‐κ dielectricscitations
- 2006Influence of electron-beam and ultraviolet treatments on low-k porous dielectricscitations
Places of action
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article
Influence of electron-beam and ultraviolet treatments on low-k porous dielectrics
Abstract
<jats:p>The down scaling of complementary metal oxide semiconductor transistors requires materials such as porous low-k dielectrics for advanced interconnects to reduce resistance-capacitance delay. After the deposition of the matrix and a sacrificial organic phase (porogen), postcuring treatments may be used to create porosity by evaporation of the porogen. In this paper, Auger electron spectroscopy is performed to simultaneously modify the material (e-beam cure) and measure the corresponding changes in structure and chemical composition. X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy measurements in attenuated total reflection mode confirm the Auger results. The porogen removal and matrix cross-linking result in the formation of a Si–O–Si network under e-beam or ultra violet cure. The possible degradation of these materials, even after cure, is mainly due the presence of Si–C bonds.</jats:p>