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Daele, B. Van
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article
Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN∕GaN high-electron-mobility transistors
Abstract
<jats:p>Recent experiments have shown that in situ passivation by Si3N4 of AlGaN∕GaN high-electron-mobility transistors results in improved electrical characteristics. Transmission electron microscopy techniques have been applied to study the metal contact formation on top of passivated AlGaN∕GaN structures. Contrary to unpassivated AlGaN∕GaN, the AlGaN top layer is not consumed by a typical Au∕Mo∕Al∕Ti metal stack. Instead, a thin AlN interface layer is formed, being the key factor in the Ohmic contact formation. The formation of this AlN is believed to be due to extraction of N atoms out of the AlGaN. The resulting N vacancies, electrical donors, create a conducting channel through the AlGaN.</jats:p>