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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Reiss, G.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2022Quantitative atomic order characterization of a Mn 2 FeAl Heusler epitaxial thin film
- 2020Optimization of ruthenium as a buffer layer for non-collinear antiferromagnetic Mn 3 X films
- 2019Field-Tunable 0-π-Transitions in SnTe Topological Crystalline Insulator SQUIDs
- 2016Static magnetic proximity effect in $mathrm{Pt / Ni_{1 − x} Fe_x}$ bilayers investigated by x-ray resonant magnetic reflectivitycitations
- 2013Quantitative study of the spin Hall magnetoresistance in ferromagnetic insulator/normal metal hybridscitations
- 2010Structural Study of Amorphous CoFeB Magnetic Thin Films by Electron Diffraction
- 2006Magnetic and chemical properties of Co2MnSi thin films compared to the Co2MnSi∕Al-O interfacecitations
- 2006FMR investigations of half-metallic ferromagnetscitations
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article
Magnetic and chemical properties of Co2MnSi thin films compared to the Co2MnSi∕Al-O interface
Abstract
The Heusler alloy Co2MnSi with theoretically predicted 100% spin polarization has been successfully implemented in Co2MnSi∕AlOx∕Co7Fe3 magnetic tunnel junctions recently. Here we investigated 100 nm thick Co2MnSi films grown on a vanadium buffer and capped by a thin alumina film. This stack is similar to the lower electrode including the tunneling barrier of magnetic tunnel junctions. By soft x-ray absorption spectroscopy and magnetic circular dichroism in fluorescence and total electron yield detection we determined differences between the chemical and magnetic properties of the Co2MnSi thin films and the Co2MnSi∕AlOx interface. Whereas MnO was formed directly at the interface during plasma oxidation of the Al layer, the interfacial Co was not oxidized and its x-ray absorption line shape at the L2,3 edge was similar to the line shape of bulk Co2MnSi. The atomically ordered bulk Co2MnSi showed characteristic differences in the x-ray absorption spectra in comparison with the disordered samples: in the ordered state of the bulk both, Co and Mn, showed additional shoulders about 4 eV above the L2,3 resonances, a large circular dichroism, and a pronounced x-ray absorption near edge fine structure. The same was found for interfacial Co, whereas for interfacial Mn these features were masked by the characteristic absorption multiplet structure of MnO right at the interface which also resulted in a strong reduction of the interfacial Mn moment in annealed samples.