Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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Först, M.

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Max Planck Institute for the Structure and Dynamics of Matter

in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (6/6 displayed)

  • 2017Multiple Supersonic Phase Fronts Launched at a Complex-Oxide Heterointerface26citations
  • 2007Electronic band gap of Si/SiO2 quantum wells: Comparison of ab initio calculations and photoluminescence measurements20citations
  • 2006Residual stress in Si nanocrystals embedded in a SiO2 matrix64citations
  • 2006Influence of excitonic singlet-triplet splitting on the photoluminescence of Si∕SiO2 multiple quantum wells fabricated by remote plasma-enhanced chemical-vapor deposition34citations
  • 2005Fabrication of a Si∕SiO2 multiple-quantum-well light emitting diode using remote plasma enhanced chemical vapor deposition10citations
  • 2000Phase change in Ge2Sb2Te5 films investigated by coherent phonon spectroscopy71citations

Places of action

Chart of shared publication
Clark, J. N.
1 / 1 shared
Frano, A.
1 / 1 shared
Triscone, J.-M.
1 / 3 shared
Mattoni, G.
1 / 3 shared
Beyerlein, Kenneth
1 / 1 shared
Yefanov, O.
1 / 1 shared
Cavalleri, A.
1 / 14 shared
Mankowsky, R.
1 / 2 shared
Catalano, S.
1 / 3 shared
Hu, W.
1 / 9 shared
Dhesi, S. S.
1 / 20 shared
Chollet, M.
1 / 3 shared
Collins, Sh
1 / 1 shared
Gibert, M.
1 / 7 shared
Lemke, H.
1 / 2 shared
Moser, B.
1 / 12 shared
Caviglia, A. D.
1 / 2 shared
Glownia, J. M.
1 / 1 shared
Rölver, R.
4 / 4 shared
Dymiati, A.
1 / 1 shared
Kurz, H.
4 / 9 shared
Wagner, J.-M.
1 / 1 shared
Spangenberg, B.
4 / 4 shared
Seino, K.
1 / 1 shared
Bechstedt, F.
1 / 18 shared
Berghoff, B.
2 / 2 shared
Mayer, J.
1 / 12 shared
Arguirov, T.
1 / 1 shared
Mchedlidze, T.
1 / 2 shared
Kittler, M.
1 / 1 shared
Winkler, O.
1 / 1 shared
Brüninghoff, S.
1 / 1 shared
Laurenzis, M.
1 / 1 shared
Trappe, C.
1 / 1 shared
Dekorsy, T.
1 / 1 shared
Béchevet, B.
1 / 1 shared
Chart of publication period
2017
2007
2006
2005
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Co-Authors (by relevance)

  • Clark, J. N.
  • Frano, A.
  • Triscone, J.-M.
  • Mattoni, G.
  • Beyerlein, Kenneth
  • Yefanov, O.
  • Cavalleri, A.
  • Mankowsky, R.
  • Catalano, S.
  • Hu, W.
  • Dhesi, S. S.
  • Chollet, M.
  • Collins, Sh
  • Gibert, M.
  • Lemke, H.
  • Moser, B.
  • Caviglia, A. D.
  • Glownia, J. M.
  • Rölver, R.
  • Dymiati, A.
  • Kurz, H.
  • Wagner, J.-M.
  • Spangenberg, B.
  • Seino, K.
  • Bechstedt, F.
  • Berghoff, B.
  • Mayer, J.
  • Arguirov, T.
  • Mchedlidze, T.
  • Kittler, M.
  • Winkler, O.
  • Brüninghoff, S.
  • Laurenzis, M.
  • Trappe, C.
  • Dekorsy, T.
  • Béchevet, B.
OrganizationsLocationPeople

article

Residual stress in Si nanocrystals embedded in a SiO2 matrix

  • Rölver, R.
  • Först, M.
  • Spangenberg, B.
  • Arguirov, T.
  • Mchedlidze, T.
  • Berghoff, B.
  • Kittler, M.
Abstract

<jats:p>Multiple quantum wells consisting of alternating Si and SiO2 layers were studied by means of Raman scattering. The structures were fabricated by the remote plasma enhanced chemical vapor deposition of amorphous Si and SiO2 layers on quartz substrate. The structures were subjected to a rapid thermal annealing procedure for Si crystallization. The obtained results suggest that the Si layers consist of nanocrystals embedded in an amorphous Si phase. It was found that the silicon nanocrystals inside 2nm thin layers are under high residual compressive stress. Moreover, the metastable Si III phase was detected in these samples supporting the presence of large compressive stresses in the structures. The compressive stress could be relaxed upon local laser annealing.</jats:p>

Topics
  • amorphous
  • phase
  • Silicon
  • annealing
  • crystallization
  • chemical vapor deposition