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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Munroe, P.
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Topics
Publications (11/11 displayed)
- 2016Chemical bonding states and solar selective characteristics of unbalanced magnetron sputtered TixM1−x−yNyfilmscitations
- 2015Mapping strain modulated electronic structure perturbations in mixed phase bismuth ferrite thin filmscitations
- 2014Phase transformation pathways in amorphous germanium under indentation pressurecitations
- 2011Chemistry of Ruddlesden-Popper planar faults at a ferroelectric-ferromagnet perovskite interfacecitations
- 2009Nanoindentation of ion-implanted crystalline germaniumcitations
- 2009Effect of microstructure upon elastic behaviour of human tooth enamelcitations
- 2008Thickness-dependent phase transformation in nanoindented germanium thin filmscitations
- 2006Phase transformations induced by spherical indentation in ion-implanted amorphous siliconcitations
- 2004Phase transformations induced in relaxed amorphous silicon by indentation at room temperaturecitations
- 2001Mechanical deformation in silicon by micro-indentationcitations
- 2000Transmission electron microscopy observation of deformation microstructure under spherical indentation in siliconcitations
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article
Phase transformations induced by spherical indentation in ion-implanted amorphous silicon
Abstract
<p>The deformation behavior of ion-implanted (unrelaxed) and annealed ion-implanted (relaxed) amorphous silicon (a-Si) under spherical indentation at room temperature has been investigated. It has been found that the mode of deformation depends critically on both the preparation of the amorphous film and the scale of the mechanical deformation. Ex situ measurements, such as Raman microspectroscopy and cross-sectional transmission electron microscopy, as well as in situ electrical measurements reveal the occurrence of phase transformations in all relaxed a-Si films. The preferred deformation mode of unrelaxed a-Si is plastic flow, only under certain high load conditions can this state of a-Si be forced to transform. In situ electrical measurements have revealed more detail of the transformation process during both loading and unloading. We have used ELASTICA simulations to obtain estimates of the depth of the metallic phase as a function of load, and good agreement is found with the experiment. On unloading, a clear change in electrical conductivity is observed to correlate with a "pop-out" event on load versus penetration curves.</p>