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Nishimura, J.
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article
Electronic transport properties in SrTiO3–LaAlO3 solid-solution films
Abstract
<jats:p>We report on the structural and electronic properties of solid-solution films consisting of perovskite band insulators, SrTiO3 and LaAlO3, with a chemical formula of Sr1−xLaxTi1−xAlxO3−δ. Single crystalline films grown by pulsed-laser deposition are fairly insulating below 300K when having x⩾0.6, while x&lt;0.6 films exhibit electronic conduction accountable with a variable-range hopping. Room temperature conductivity has a maximum value of 20Ω−1cm−1 at x∼0.2. Hall measurements reveal that the density of the carriers varies as x(1−x) per Ti site up to x∼0.35, apparently indicating that La3+ donates one electron to a remaining Ti site. The results are discussed in comparison with the electronic properties of LaySr1−yTiO3 films in terms of different carrier localization mechanisms.</jats:p>