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Suvorova, Alexandra
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Topics
Publications (17/17 displayed)
- 2018Nanogeochemistry of hydrothermal magnetitecitations
- 2018Nanoscale partitioning of Ru, Ir, and Pt in base-metal sulfides from the Caridad chromite deposit, Cubacitations
- 2016Thermally stable coexistence of liquid and solid phases in gallium nanoparticlescitations
- 2015Structural transformation of implanted diamond layers during high temperature annealingcitations
- 2014Effect of Interface energy and electron transfer on shape, plasmon resonance and SERS activity of supported surfactant-free gold nanoparticlescitations
- 2014Transformation of YSZ under high fluence argon ion implantationcitations
- 2013Conventional and analytical electron microscopy study of phase transformation in implanted diamond layers
- 2011Effects of ad-atom diffusivity throughout Sb-mediated formation of Ge/Si nanoislands
- 2008Structural and optical properties of ZnO thin films by rf magnetron sputtering with rapid thermal annealingcitations
- 2007Application of two-electron spectroscopy in reflection for studying electronic structure of surfaces and thin filmscitations
- 2007Multifunctional Nanocrystalline Thin Films of Er2O3: Interplay between Nucleation Kinetics and Film Characteristicscitations
- 2007Er2O3 as a high-K dielectric candidatecitations
- 2006Magnesium oxide as a candidate high-k gate dielectriccitations
- 2005ZrO2 film interfaces with Si and SiO2citations
- 2003Study of interface formation of (Ba,Sr)TiO3 thin films grown by rf sputter deposition on bare Si and thermal SiO2/Si substrates
- 2002Study of interface formation of (Ba,Sr)TiO3 thin films grown by rf sputter deposition on bare Si and thermal SiO2/Si substrates
- 2001Anisotropy of the spatial distribution of In(Ga)As quantum dots in In(Ga)As-GaAs multilayer heterostructures studied by X-ray and synchrotron diffraction and transmission electron microscopycitations
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article
Magnesium oxide as a candidate high-k gate dielectric
Abstract
Magnesium oxide (MgO) thin films with sharp interfaces were deposited by sputtering of a Mg target on Si. The film stack was characterized using spectroscopic ellipsometry and transmission electron microscopy and the film static dielectric constant (kappa) and interface traps were determined. An amorphous SiO2 layer was found at the MgO/Si interface as a result of subcutaneous Si oxidation. kappa for the MgO films was found to be about twice that of SiO2, and the interface trap densities of MgO/Si were found to be comparable with SiO2/Si, rendering MgO competitive with all presently considered high-kappa dielectrics. (c) 2006 American Institute of Physics.