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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sharp, I. D.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2008Nonmagnetic compensation in ferromagnetic Ga1-x Mnx As and Ga1-xMnx P synthesized by ion implantation and pulsed-laser meltingcitations
- 2007Superheating and supercooling of Ge nanocrystals embedded in SiO 2citations
- 2007Synthesis and optical properties of multiband III-V semiconductor alloyscitations
- 2006Multiband GaNAsP quaternary alloyscitations
- 2005A chemical approach to 3-D lithographic patterning of Si and Ge nanocrystals
- 2004Characterization and manipulation of exposed Ge nanocrystals
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article
Multiband GaNAsP quaternary alloys
Abstract
We have synthesized GaNx As1-y Py alloys (x∼0.003-0.01 and y=0-0.4) using nitrogen (N) ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band of the GaAs1-y Py substrate, and strong optical transitions from the valence band to the lower (E-) and upper (E+) conduction subbands are observed. The relative strengths of the E- and E+ transition change as the localized N level EN emerges from the conduction band forming narrow intermediate band for y>0.3. The results show that GaNx As1-x-y Py alloys with y>0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells. © 2006 American Institute of Physics.