| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Derluyn, Joff
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2021AlGaN channel high electron mobility transistors with regrown ohmic contactscitations
- 2020Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructurecitations
- 2019Buffer breakdown in GaN-on-Si HEMTs: a comprehensive study based on a sequential growth experimentcitations
- 20141900 V, 1.6 mΩ cm2 AlN/GaN-on-Si power devices realized by local substrate removalcitations
- 2010Very low sheet resistance AlInN/GaN HEMT grown on 100 mm Si(111) by MOVPEcitations
- 2008AlGaN photodetectors for applications in the extreme ultraviolet (EUV) wavelength rangecitations
- 2006Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN∕GaN high-electron-mobility transistorscitations
- 2005The role of Al on Ohmic contact formation on n-type GaN and AlGaN∕GaNcitations
- 2005Improvement of AlGaN∕GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layercitations
Places of action
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article
Improvement of AlGaN∕GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layer
Abstract
<jats:p>We have made AlGaN∕GaN high electron mobility transistors with a Si3N4 passivation layer that was deposited in situ in our metal-organic chemical-vapor deposition reactor in the same growth sequence as the rest of the layer stack. The Si3N4 is shown to be of high quality and stoichiometric in composition. It reduces the relaxation, cracking, and surface roughness of the AlGaN layer. It also neutralizes the charges at the top AlGaN interface, which leads to a higher two-dimensional electron-gas density. Moreover, it protects the surface during processing and improves the Ohmic source and drain contacts. This leads to devices with greatly improved characteristics.</jats:p>