| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Derluyn, Joff
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Topics
Publications (9/9 displayed)
- 2021AlGaN channel high electron mobility transistors with regrown ohmic contactscitations
- 2020Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructurecitations
- 2019Buffer breakdown in GaN-on-Si HEMTs: a comprehensive study based on a sequential growth experimentcitations
- 20141900 V, 1.6 mΩ cm2 AlN/GaN-on-Si power devices realized by local substrate removalcitations
- 2010Very low sheet resistance AlInN/GaN HEMT grown on 100 mm Si(111) by MOVPEcitations
- 2008AlGaN photodetectors for applications in the extreme ultraviolet (EUV) wavelength rangecitations
- 2006Mechanism for Ohmic contact formation on Si3N4 passivated AlGaN∕GaN high-electron-mobility transistorscitations
- 2005The role of Al on Ohmic contact formation on n-type GaN and AlGaN∕GaNcitations
- 2005Improvement of AlGaN∕GaN high electron mobility transistor structures by in situ deposition of a Si3N4 surface layercitations
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article
The role of Al on Ohmic contact formation on n-type GaN and AlGaN∕GaN
Abstract
<jats:p>A standard metallization scheme for the formation of Ohmic contacts on n-type GaN does exist. It has the following multilayer structure: Ti∕Al∕metal∕Au. Ti is known to extract N out of the GaN. This leaves a high density of N vacancies (donors) near the interface pinning the Fermi level. The created tunnel junction is responsible for an Ohmic contact behavior. Au is deposited as the final metal layer to exclude oxidation of the contact and the metal should limit the diffusion of Au into the layers below and vice versa. Al in the metallization scheme is known to improve the contact resistance, but the reason why has not been reported yet. We studied Ti and Ti∕Al contacts on GaN and AlGaN∕GaN as a function of annealing temperature by transmission electron microscopy. The role of Al in the metal multilayer, and of Al in the AlGaN on the Ohmic contact formation, has been determined. The latter result indicates that the standard metallization scheme for GaN cannot be simply transferred to AlGaN∕GaN structures.</jats:p>