| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Suvorova, Alexandra
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2018Nanogeochemistry of hydrothermal magnetitecitations
- 2018Nanoscale partitioning of Ru, Ir, and Pt in base-metal sulfides from the Caridad chromite deposit, Cubacitations
- 2016Thermally stable coexistence of liquid and solid phases in gallium nanoparticlescitations
- 2015Structural transformation of implanted diamond layers during high temperature annealingcitations
- 2014Effect of Interface energy and electron transfer on shape, plasmon resonance and SERS activity of supported surfactant-free gold nanoparticlescitations
- 2014Transformation of YSZ under high fluence argon ion implantationcitations
- 2013Conventional and analytical electron microscopy study of phase transformation in implanted diamond layers
- 2011Effects of ad-atom diffusivity throughout Sb-mediated formation of Ge/Si nanoislands
- 2008Structural and optical properties of ZnO thin films by rf magnetron sputtering with rapid thermal annealingcitations
- 2007Application of two-electron spectroscopy in reflection for studying electronic structure of surfaces and thin filmscitations
- 2007Multifunctional Nanocrystalline Thin Films of Er2O3: Interplay between Nucleation Kinetics and Film Characteristicscitations
- 2007Er2O3 as a high-K dielectric candidatecitations
- 2006Magnesium oxide as a candidate high-k gate dielectriccitations
- 2005ZrO2 film interfaces with Si and SiO2citations
- 2003Study of interface formation of (Ba,Sr)TiO3 thin films grown by rf sputter deposition on bare Si and thermal SiO2/Si substrates
- 2002Study of interface formation of (Ba,Sr)TiO3 thin films grown by rf sputter deposition on bare Si and thermal SiO2/Si substrates
- 2001Anisotropy of the spatial distribution of In(Ga)As quantum dots in In(Ga)As-GaAs multilayer heterostructures studied by X-ray and synchrotron diffraction and transmission electron microscopycitations
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article
ZrO2 film interfaces with Si and SiO2
Abstract
The interface formed by the thermal oxidation of sputter-deposited Zr metal onto Si (100)- and SiO2-coated Si (100) wafers was studied in situ and in real time using spectroscopic ellipsometry (SE) in the 1.5-4.5 photon energy range and mass spectrometry of recoiled ions (MSRI). SE yielded optical properties for the film and interface and MSRI yielded film and interface composition. An optical model was developed and verified using transmission electron microscopy. Interfacial reaction of the ZrO2 was observed for both substrates, with more interaction for Si substrates. Equivalent oxide thicknesses and interface trap levels were determined on capacitors with lower trap levels found on samples with a thicker SiO2 underlayer. In addition to the optical properties for the intermixed interface layer, the optical properties for Zr metal and unreacted ZrO2 are also reported. (c) 2005 American Institute of Physics.