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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Tsai, H. M.
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Publications (3/3 displayed)
- 2005Electronic properties of a-CNx thin films : An x-ray-absorption and photoemission spectroscopy studycitations
- 2005Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si:DLC) thin filmscitations
- 2004Electronic structure and bonding properties of Si-doped hydrogenated amorphous carbon filmscitations
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article
Electronic properties of a-CNx thin films : An x-ray-absorption and photoemission spectroscopy study
Abstract
The electronic properties of amorphous carbon nitride were studied by x-ray-absorption near-edge structure (XANES) and valence-band photoelectron spectroscopy (PES). The nitrogen incorporation was found to induce graphitization, as evidenced by an increase of the sp2 cluster in C and N K-edge XANES spectra. The structure is found to be similar to pyridine. Hybridized C–N bond lengths were determined from the position of the σ* resonance of XANES spectra and the obtained results suggest sp2 hybridization. A valence-band PES spectrum showed that the p‐π band became more intense than the p‐σ band upon higher at. % nitrogen addition, which confirmed the role played by the π bonds in controlling the electronic structure of a‐CNx films.