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Chung, S. J.
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document
Fabrication of GaN xAs 1-x quantum structures by focused ion beam patterning
Abstract
A novel approach to the fabrication of GaN <sub>x</sub>As <sub>1-x</sub> quantum dots and wires via ion beam patterning is presented. Photomodulated reflectance spectra confirm that N can be released from the As sublattice of an MBE-grown GaN <sup>x</sup>As <sup>1-x</sup> film by amorphization through ion implantation followed by regrowth upon rapid thermal annealing (RTA). Amorphization may be achieved with a focused ion beam (FIB), which is used to implant Ga ions in patterned lines such that annealing produces GaAs regions within a GaN <sub>x</sub>As <sub>1-x</sub> film. The profiles of these amorphized lines are dependent upon the dose implanted, and the film reaches a damage threshold during RTA due to excess Ga. By altering the FIB implantation pattern, quantum dots or wires may be fabricated. © 2005 American Institute of Physics.