Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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Naji, M.
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Kroger, Roland

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University of York

in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (20/20 displayed)

  • 2016Semiconductor-Metal Nano-Floret Hybrid Structures by Self-Processing Synthesis11citations
  • 2013Microstructural evolution and nanoscale crystallography in scleractinian coral spherulites24citations
  • 2013Formation and Structure of Calcium Carbonate Thin Films and Nanofibers Precipitated in the Presence of Poly(Allylamine Hydrochloride) and Magnesium Ions45citations
  • 2011An artificial biomineral formed by incorporation of copolymer micelles in calcite crystals263citations
  • 2008Interaction of Stacking Faults in Wurtzite a-Plane GaN on r-Plane Sapphirecitations
  • 2008The role of anisotropy for defect properties in a-plane GaNcitations
  • 2008The role of anisotropy for the defect properties in a-plane GaN - art. no. 689403citations
  • 2007On the mechanism of dislocation and stacking fault formation in a-plane GaN films grown by hydride vapor phase epitaxycitations
  • 2007Defect structure of a-plane GaN grown by hydride and metal-organic vapor phase epitaxy on r-plane sapphire8citations
  • 2006The versatility of hot-filament activated chemical vapor deposition67citations
  • 2006Anti-diffusion barriers for gold-based metallizations to p-GaNcitations
  • 2006TEM analyses of wurtzite InGaN islands grown by MOVPE and MBE11citations
  • 2006Anisotropic spatial correlation of CdSe/Zn(S)Se quantum dot stacks grown by MBE2citations
  • 2006Surface segregation of Si and Mg dopants in MOVPE grown GaN films revealed by X-ray photoemission spectro-microscopy5citations
  • 2005Surfactant-mediated epitaxy of Ge on Si(111)31citations
  • 2005Microstructure of highly p-type doped GaN sub-contact layers for low-resistivity contactscitations
  • 2004Determination of the anisotropic optical properties for perfluorinated vanadyl phthalocyanine thin films14citations
  • 2004Microstructural study of quantum well degradation in ZnSe-based laser diodescitations
  • 2002On the way to the II-VI quantum dot VCSEL7citations
  • 2002Plasma induced microstructural, compositional, and resistivity changes in ultrathin chemical vapor deposited titanium nitride films49citations

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Chart of shared publication
Subramani, Thangavel
1 / 2 shared
Yerushalmi, Roie
1 / 3 shared
Sarkar, Debabrata
1 / 2 shared
Hazut, Ori
1 / 2 shared
Roncal-Herrero, Teresa
1 / 3 shared
Dash, Sthitaprajna
1 / 2 shared
Waichman, Sharon
1 / 2 shared
Saunders, M.
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Dissard, D.
1 / 1 shared
Verch, A.
1 / 1 shared
Locht, R. Van De
1 / 1 shared
Rixen, T.
1 / 1 shared
Moya, A.
1 / 2 shared
Cantaert, Bram
1 / 2 shared
Kim, Yi-Yeoun
2 / 15 shared
Verch, Andreas
1 / 5 shared
Paunov, Vesselin
1 / 1 shared
Meldrum, Fiona C.
2 / 21 shared
Ludwig, Henning
1 / 2 shared
Yang, Pengcheng
1 / 4 shared
Eichhorn, Stephen J.
1 / 45 shared
Borukhin, Shirly
1 / 1 shared
Armes, Steven P.
1 / 35 shared
Pechook, Sasha
1 / 1 shared
Ribeiro, Luis
1 / 1 shared
Ganesan, Kathirvel
1 / 2 shared
Kulak, Alexander N.
1 / 9 shared
Pokroy, Boaz
1 / 12 shared
Rosenauer, A.
5 / 15 shared
Paskova, T.
5 / 17 shared
Haskell, B.
1 / 1 shared
Monemar, B.
2 / 4 shared
Hommel, D.
9 / 16 shared
Fini, P.
1 / 1 shared
Speck, J.
1 / 2 shared
Nakamura, S.
1 / 4 shared
Figge, S.
4 / 8 shared
Hoefer, Markus
1 / 2 shared
Schaefer, Lothar
1 / 2 shared
Piotrowska, A.
1 / 22 shared
Turos, A.
1 / 5 shared
Guziewicz, M.
1 / 5 shared
Stonert, A.
1 / 5 shared
Kaminska, E.
1 / 19 shared
Dynowska, E.
1 / 7 shared
Kuebel, C.
1 / 5 shared
Yamaguchi, T.
1 / 6 shared
Pretorius, A.
2 / 2 shared
Schowalter, M.
1 / 8 shared
Roventa, E.
2 / 2 shared
Alexe, G.
3 / 3 shared
Gregoratti, L.
1 / 13 shared
Gangopadhyay, S.
1 / 5 shared
Schmidt, Th
1 / 2 shared
Flege, J. I.
1 / 3 shared
Siebert, M.
1 / 3 shared
Barinov, A.
1 / 6 shared
Falta, J.
2 / 4 shared
Schmidt, T.
1 / 15 shared
Janzen, A.
1 / 1 shared
Clausen, T.
1 / 1 shared
Hoegen, M. Horn-Von
1 / 1 shared
Kury, P.
1 / 1 shared
Zahl, P.
1 / 1 shared
Kammler, M.
1 / 6 shared
Bottcher, T.
1 / 1 shared
Dennemarck, J.
1 / 1 shared
Zahn, D. R. T.
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Schlettwein, D.
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Michaelis, W.
1 / 1 shared
Gordan, O. D.
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Friedrich, M.
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Kampen, T.
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Klude, M.
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Ueta, A.
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Ryder, P.
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Leonardi, K.
1 / 1 shared
Michler, P.
1 / 4 shared
Gutowski, J.
1 / 3 shared
Passow, T.
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Kruse, C.
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Heinke, H.
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Ulrich, S.
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Sebald, K.
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Marcadal, C.
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Eizenberg, M.
1 / 12 shared
Chen, L.
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Chart of publication period
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Co-Authors (by relevance)

  • Subramani, Thangavel
  • Yerushalmi, Roie
  • Sarkar, Debabrata
  • Hazut, Ori
  • Roncal-Herrero, Teresa
  • Dash, Sthitaprajna
  • Waichman, Sharon
  • Saunders, M.
  • Dissard, D.
  • Verch, A.
  • Locht, R. Van De
  • Rixen, T.
  • Moya, A.
  • Cantaert, Bram
  • Kim, Yi-Yeoun
  • Verch, Andreas
  • Paunov, Vesselin
  • Meldrum, Fiona C.
  • Ludwig, Henning
  • Yang, Pengcheng
  • Eichhorn, Stephen J.
  • Borukhin, Shirly
  • Armes, Steven P.
  • Pechook, Sasha
  • Ribeiro, Luis
  • Ganesan, Kathirvel
  • Kulak, Alexander N.
  • Pokroy, Boaz
  • Rosenauer, A.
  • Paskova, T.
  • Haskell, B.
  • Monemar, B.
  • Hommel, D.
  • Fini, P.
  • Speck, J.
  • Nakamura, S.
  • Figge, S.
  • Hoefer, Markus
  • Schaefer, Lothar
  • Piotrowska, A.
  • Turos, A.
  • Guziewicz, M.
  • Stonert, A.
  • Kaminska, E.
  • Dynowska, E.
  • Kuebel, C.
  • Yamaguchi, T.
  • Pretorius, A.
  • Schowalter, M.
  • Roventa, E.
  • Alexe, G.
  • Gregoratti, L.
  • Gangopadhyay, S.
  • Schmidt, Th
  • Flege, J. I.
  • Siebert, M.
  • Barinov, A.
  • Falta, J.
  • Schmidt, T.
  • Janzen, A.
  • Clausen, T.
  • Hoegen, M. Horn-Von
  • Kury, P.
  • Zahl, P.
  • Kammler, M.
  • Bottcher, T.
  • Dennemarck, J.
  • Zahn, D. R. T.
  • Schlettwein, D.
  • Michaelis, W.
  • Gordan, O. D.
  • Friedrich, M.
  • Kampen, T.
  • Klude, M.
  • Ueta, A.
  • Ryder, P.
  • Leonardi, K.
  • Michler, P.
  • Gutowski, J.
  • Passow, T.
  • Kruse, C.
  • Heinke, H.
  • Ulrich, S.
  • Sebald, K.
  • Marcadal, C.
  • Eizenberg, M.
  • Chen, L.
OrganizationsLocationPeople

article

Surfactant-mediated epitaxy of Ge on Si(111)

  • Schmidt, T.
  • Janzen, A.
  • Clausen, T.
  • Kroger, Roland
  • Hoegen, M. Horn-Von
  • Kury, P.
  • Zahl, P.
  • Falta, J.
  • Kammler, M.
Abstract

For a characterization of interface and “bulk” properties of Gefilmsgrown on Si(111) by Sb surfactant-mediated epitaxy,grazing incidence x-ray diffraction and transmission electron microscopy have been used. The interface roughness, defect structure, and strain state have been investigated in dependence of film thickness and growth temperature. For all growth parameters, atomically smooth interfaces are observed. For thin Ge layers, about 75% of the strain induced by the lattice mismatch is relaxed by misfit dislocations at the Ge/Si interface. Only a slight increase of the degree of relaxation is found for thicker films. At growth temperatures below about 600°C , the formation of twins is observed, which can be avoided at higher temperatures.

Topics
  • impedance spectroscopy
  • x-ray diffraction
  • transmission electron microscopy
  • dislocation
  • surfactant
  • defect structure