| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Crisci, Alexandre
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2024Silver nanowire networks coated with a few nanometer thick aluminum nitride films for ultra-transparent and robust heating applicationscitations
- 2022Green upconversion improvement of TiO2 codoped Er3+-Yb3+ nanoparticles based thin film by adding ALD-Al2O3 for silicon solar cell applicationscitations
- 2020Synthesis of upconversion TiO2:Er3+-Yb3+ nanoparticles and deposition of thin films by spin coating techniquecitations
- 2020Improved critical temperature of superconducting plasma-enhanced atomic layer deposition of niobium nitride thin films by thermal annealingcitations
- 2019Superconducting properties of NbN thin films deposited by plasma enhanced atomic layer deposition using a metalorganic precursor
- 2018Aluminum nitride thin films deposited by hydrogen plasma enhanced and thermal atomic layer deposition
- 2016Al2O3 thin films deposited by thermal atomic layer deposition: Characterization for photovoltaic applicationscitations
- 2016Al2O3 thin films deposited by thermal atomic layer deposition: Characterization for photovoltaic applicationscitations
- 2016Growth of boron nitride films on w-AlN (0001), 4° off-cut 4H-SiC (0001), W (110) and Cr (110) substrates by Chemical Vapor Depositioncitations
- 2016An Atomistic View of the Incipient Growth of Zinc Oxide Nanolayerscitations
- 2015Superconducting properties of NbN thin films deposited by plasma enhanced atomic layer deposition using a metalorganic precursor
- 2014Niobium nitride thin films deposited by high temperature chemical vapor depositioncitations
- 2013Carbon corrosion and platinum nanoparticles ripening under open circuit potential conditionscitations
- 2010The effect of carbon nanolayers on wetting of alumina by NiSi alloyscitations
- 2006Raman Imaging and Kelvin Probe Microscopy for the Examination of the Heterogeneity of Doping in Polycrystalline Boron-Doped Diamond Electrodes
- 2005Micro-Raman scattering from undoped and phosphorus-doped (111) homoepitaxial diamond films: Stress imaging of crackscitations
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article
Micro-Raman scattering from undoped and phosphorus-doped (111) homoepitaxial diamond films: Stress imaging of cracks
Abstract
We report postgrowth micro-Raman stress imaging of cracks in (111) homoepitaxial diamond films. Undoped and phosphorous-doped diamond thin films grown by microwave plasma-enhanced chemical-vapor deposition on Ib (111)-oriented diamond substrates have been studied by confocal micro-Raman spectroscopy. For comparison purposes, a film grown on a (100) Ib substrate was also examined. Thanks to the confocal optics, the Raman signal arising from the epilayer could be discriminated from that arising from the substrate. As was already reported, the (111) films exhibited substantial tensile stress, indicated by a downshift in the Raman peak and by spontaneous cracking in films grown thicker than 5 µm. The sixfold symmetry of the cracks supported that the films were homoepitaxial. A high compressive stress was also detected at the substrate near surface, and a partial stress relaxation was observed to occur in the vicinity of the cracks. Possible origins of the high tensile stress observed in the (111) homoepitaxial diamond films are discussed.