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Petravic, M.
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article
Electrical characterization of p-GaAs epilayers disordered by doped spin-on-glass
Abstract
<p>Impurity-free disordering (IFD) of uniformly doped p-GaAs epitaxial layers was achieved using either undoped or doped (Ga or P) spin-on-glass (SOG) in conjunction with rapid thermal annealing in the temperature range from 800 to 925 °C. Capacitance-voltage measurements showed a pronounced increase in the doping concentration (N <sub>A</sub>) in the near-surface region of the layers disordered using both undoped and P:SOG. The increase in N <sub>A</sub> showed an Arrhenius-like dependence on the inverse of annealing temperature. On the other hand, N <sub>A</sub> did not change significantly for Ga-doped SOG. These changes can be explained by the relative injection of excess gallium vacancies (V <sub>Ga</sub>) during IFD of p-GaAs by the different SOG layers. Deep-level transient spectroscopy showed a corresponding increase in the concentration of a defect HA (E <sub>v</sub>+0.39 <sub>e</sub>V), which can be attributed to Cu, in the undoped and P:SOG disordered p-GaAs layers, but not in the epilayers disordered by Ga:SOG. We have explained the increase in free carrier concentration by the segregation of Zn atoms towards the surface during the injection of V <sub>Ga</sub>. The redistribution of Zn during disordering of buried marker layers in GaAs and Al <sub>0.6</sub>Ga <sub>0.4</sub>As using either undoped or Ga-doped SOG was verified by secondary-ion mass spectrometry.</p>