Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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Naji, M.
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Manasreh, M. O.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (13/13 displayed)

  • 2023Theoretical Investigations of the Structural, Dynamical, Electronic, Magnetic, and Thermoelectric Properties of CoMRhSi (M = Cr, Mn) Quaternary Heusler Alloys3citations
  • 2014Uncooled photodetectors based on CdSe nanocrystals with an interdigital metallization14citations
  • 2013Colloidal growth, characterization and optoelectronic study of strong light absorbent inexpensive iron pyrite nanomaterials by using amine ligands for photovoltaic applicationcitations
  • 2004Intersubband Transitions in GaN/Al<sub>x</sub>Ga<sub>1-x</sub>N Multi Quantum Wells1citations
  • 2004Determination of the carrier concentration in InGaAsN∕GaAs single quantum wells using Raman scattering8citations
  • 2003Optical absorption of intersubband transitions in In0.3Ga0.7As/GaAs multiple quantum dots8citations
  • 2003Photoluminescence of metalorganic-chemical-vapor-deposition-grown GaInNAs/GaAs single quantum wells5citations
  • 2002Ion-beam-produced damage and its stability in AlN films64citations
  • 2002Structural disorder in ion-implanted AlxGa1-xN40citations
  • 2002Interband Transitions in GaInNAs/GaAs Single Quantum Wellscitations
  • 2001Optical Absorption of Nitrogen Vacancy in Proton Irradiated Al<sub>x</sub>Ga<sub>1-x</sub>N thin Filmscitations
  • 2001Thermal Anneal Effects on Carbon-Hydrogen LVMs In AlGaNcitations
  • 2000Localized Vibrational Modes of Carbon-Hydrogen Complexes in MOCVD Grown GaN and AlGaN thin filmscitations

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Chart of shared publication
Hzzazi, Abdullah
1 / 1 shared
Andharia, Eesha
1 / 1 shared
Hamad, Bothina
1 / 1 shared
Alqurashi, Hind
1 / 2 shared
Nusir, A. I.
1 / 1 shared
Aguilar, J.
1 / 4 shared
Bever, Z.
1 / 1 shared
Little, Scott A.
1 / 1 shared
Khan, M. Alam
1 / 1 shared
Mangham, Scott
1 / 1 shared
Makablah, Y.
1 / 1 shared
Lee, S. Y.
1 / 3 shared
Liang, J.
1 / 15 shared
Decuir, E. A.
1 / 1 shared
Chua, Y. C.
1 / 1 shared
Passmore, B. S.
1 / 1 shared
Morkoc, H.
1 / 5 shared
Xie, J.
1 / 10 shared
Ferguson, I. T.
4 / 6 shared
Asghar, A.
1 / 2 shared
Payne, A.
1 / 1 shared
Griffith, Aureus E.
1 / 1 shared
Grandt, Patrick A.
1 / 1 shared
Friedman, D. J.
3 / 6 shared
Johnstone, D.
1 / 1 shared
Doğan, S.
1 / 1 shared
Salamo, G. J.
3 / 7 shared
Ma, W.
1 / 2 shared
Pattada, B.
1 / 1 shared
Chen, Jiayu
1 / 1 shared
Hussein, M. L.
1 / 1 shared
Zhou, Qiaoying
2 / 2 shared
Workman, C. L.
2 / 2 shared
Ma, W. Q.
2 / 2 shared
George, C. E.
2 / 2 shared
Kucheyev, S. O.
2 / 18 shared
Guo, S.
2 / 11 shared
Williams, J. S.
2 / 39 shared
Pophristic, M.
4 / 4 shared
Zou, J.
1 / 17 shared
Zou, Jin
1 / 26 shared
Li, G.
1 / 31 shared
Jagadish, C.
1 / 23 shared
Weaver, B. D.
2 / 2 shared
Ferguson, Ian T.
1 / 1 shared
Tran, C. A.
1 / 2 shared
Zhou, Q.
1 / 8 shared
Chen, J.
1 / 51 shared
Berhane, Y.
1 / 1 shared
Chart of publication period
2023
2014
2013
2004
2003
2002
2001
2000

Co-Authors (by relevance)

  • Hzzazi, Abdullah
  • Andharia, Eesha
  • Hamad, Bothina
  • Alqurashi, Hind
  • Nusir, A. I.
  • Aguilar, J.
  • Bever, Z.
  • Little, Scott A.
  • Khan, M. Alam
  • Mangham, Scott
  • Makablah, Y.
  • Lee, S. Y.
  • Liang, J.
  • Decuir, E. A.
  • Chua, Y. C.
  • Passmore, B. S.
  • Morkoc, H.
  • Xie, J.
  • Ferguson, I. T.
  • Asghar, A.
  • Payne, A.
  • Griffith, Aureus E.
  • Grandt, Patrick A.
  • Friedman, D. J.
  • Johnstone, D.
  • Doğan, S.
  • Salamo, G. J.
  • Ma, W.
  • Pattada, B.
  • Chen, Jiayu
  • Hussein, M. L.
  • Zhou, Qiaoying
  • Workman, C. L.
  • Ma, W. Q.
  • George, C. E.
  • Kucheyev, S. O.
  • Guo, S.
  • Williams, J. S.
  • Pophristic, M.
  • Zou, J.
  • Zou, Jin
  • Li, G.
  • Jagadish, C.
  • Weaver, B. D.
  • Ferguson, Ian T.
  • Tran, C. A.
  • Zhou, Q.
  • Chen, J.
  • Berhane, Y.
OrganizationsLocationPeople

article

Determination of the carrier concentration in InGaAsN∕GaAs single quantum wells using Raman scattering

  • Griffith, Aureus E.
  • Grandt, Patrick A.
  • Friedman, D. J.
  • Johnstone, D.
  • Manasreh, M. O.
  • Doğan, S.
Abstract

<jats:p>Raman scattering from longitudinal optical phonon-plasmon coupled mode was observed in a series of InGaAsN∕GaAs single quantum well samples grown by metalorganic vapor phase epitaxy. The phonon-plasmon mode spectra were fitted with the dielectric constant function based on Drude model that contains contributions from both lattice vibrations and conduction electrons. The carrier concentration is calculated directly from the plasmon frequency, which is obtained from the fitting procedure. An empirical expression for the electron concentration, [n], in InGaAsN∕GaAs samples is determined as [n]≈{2.35×1016(ωm−502)}cm−3, where ωm is the peak of the upper frequency branch, L+, of the phonon-plasmon mode measured in unit of cm−1. The phonon-plasmon coupled mode was also investigated in rapid thermally annealed samples.</jats:p>

Topics
  • impedance spectroscopy
  • phase
  • dielectric constant