| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Duesberg, Georg S.
Universität der Bundeswehr München
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2023Three-dimensional printing of silica glass with sub-micrometer resolutioncitations
- 2023Three-dimensional printing of silica glass with sub-micrometer resolutioncitations
- 2023Revealing the influence of edge states on the electronic properties of PtSe 2citations
- 2023Controllable and Reproducible Growth of Transition Metal Dichalcogenides by Design of Experimentscitations
- 2023Controllable and Reproducible Growth of Transition Metal Dichalcogenides by Design of Experimentscitations
- 2023Identification of Ubiquitously Present Polymeric Adlayers on 2D Transition Metal Dichalcogenidescitations
- 2021Hybrid Devices by Selective and Conformal Deposition of PtSe2 at Low Temperaturescitations
- 2020Production and processing of graphene and related materials
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materialscitations
- 2020Production and processing of graphene and related materials
- 2020Crystal-structure of active layers of small molecule organic photovoltaics before and after solvent vapor annealingcitations
- 2017Enabling Flexible Heterostructures for Li-Ion Battery Anodes Based on Nanotube and Liquid-Phase Exfoliated 2D Gallium Chalcogenide Nanosheet Colloidal Solutionscitations
- 2016Thermally Prepared Mn2O3/RuO2/Ru Thin Films as Highly Active Catalysts for the Oxygen Evolution Reaction in Alkaline Mediacitations
- 2015Basal-Plane Functionalization of Chemically Exfoliated Molybdenum Disulfide by Diazonium Saltscitations
- 2015Atomic layer deposition on 2D transition metal chalcogenides: layer dependent reactivity and seeding with organic ad-layerscitations
- 2010Transparent ultrathin conducting carbon filmscitations
- 2010Transparent ultrathin conducting carbon films
- 2004High-current nanotube transistorscitations
- 2004Catalytic CVD of SWCNTs at Low Temperatures and SWCNT Devices
- 2004Chemical Vapor Deposition Growth of Single-Walled Carbon Nanotubes at 600 °C and a Simple Growth Modelcitations
- 2003Contact improvement of carbon nanotubes via electroless nickel depositioncitations
Places of action
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document
Catalytic CVD of SWCNTs at Low Temperatures and SWCNT Devices
Abstract
New results on the planar growth of single‐walled carbon nanotubes (SWCNTs) by catalytic chemical vapor deposition (CVD) at low temperatures will be reported. Optimizing catalyst, catalyst support, and growth parameters yields SWCNTs at temperatures as low as 600 °C. Growth at such low temperatures largely affects the diameter distribution since coalescence of the catalyst is suppressed. A phenomenological growth model will be suggested for CVD growth at low temperatures. The model takes into account surface diffusion and is an alternative to the bulk diffusion based vapor‐liquid‐solid (VLS) model. Furthermore, carbon nanotubes field effect transistors based on substrate grown SWCNTs will be presented. In these devices good contact resistances could be achieved by electroless metal deposition or metal evaporation of the contacts.