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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Chelikowsky, Jr
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article
Electronic structure and spin polarization of MnGaP
Abstract
We present ab initio pseudopotential-density-functional calculations for the electronic structure of the dilute magnetic semiconductor MnxGa1-xP, with a realistic x=0.063, in its ordered ferromagnetic phase. We find that it possesses a spin-polarized valence band that could support ideal spin-polarized hole transport. We further find spin-polarized features in the conduction band that could support ideal spin-polarized transport of minority electrons. As such, it emerges as a silicon-lattice-matched candidate material for spintronics applications. (C) 2004 American Institute of Physics.