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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Koinuma, Hideomi
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Publications (3/3 displayed)
- 2004Structural and Optical Properties of ZnO Epitaxial Films Grown on Al<sub>2</sub>O<sub>3</sub> (112̄0) Substrates by Metalorganic Chemical Vapor Depositioncitations
- 2004Single crystal SrTiO3 field-effect transistor with an atomically flat amorphous CaHfO3 gate insulatorcitations
- 2001Pulsed Laser Epitaxy and Magnetic Properties of Single Phase Y-Type Magnetoplumbite Thin Filmscitations
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article
Single crystal SrTiO3 field-effect transistor with an atomically flat amorphous CaHfO3 gate insulator
Abstract
<jats:p>We have observed prominent transistor action in a transition-metal oxide which is not traditionally viewed as a semiconductor. We have fabricated a field-effect transistor composed of SrTiO3(100) single crystal as a channel and an amorphous CaHfO3 layer as a gate insulator. The amorphous CaHfO3 gate insulator layer was atomically flat and had a breakdown field of over 5MV∕cm. All electrode and channel patterning was done with simple contact masks. The whole fabrication process took place at room temperature. The device showed a field-effect mobility of 0.4–0.5cm2∕Vs and an on-to-off channel current ratio of ∼105 at room temperature.</jats:p>