| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Koinuma, H.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2005Improved stoichiometry and misfit control in perovskite thin film formation at a critical fluence by pulsed laser depositioncitations
- 2004High-resolution synchrotron-radiation photoemission characterization for atomically-controlled SrTiO3(001) substrate surfaces subjected to various surface treatmentscitations
- 2004Epitaxial growth and physical properties of a room temperature ferromagnetic semiconductor: Anatase phase Ti1−xCoxO2citations
- 2003A high-resolution synchrotron-radiation angle-resolved photoemission spectrometer with <i>in situ</i> oxide thin film growth capabilitycitations
- 2003Modeling and simulation of polycrystalline ZnO thin-film transistorscitations
- 2003Layer-by-layer growth of high-optical-quality ZnO film on atomically smooth and lattice relaxed ZnO buffer layercitations
- 200345° rotational epitaxy of SrTiO3 thin films on sulfide-buffered Sicitations
- 2003Experimental investigation of ferromagnetism in II-VI disordered semiconducting compoundscitations
- 2003Quantitative control and detection of heterovalent impurities in ZnO thin films grown by pulsed laser depositioncitations
- 2002Effect of MgZnO-layer capping on optical properties of ZnO epitaxial layerscitations
- 2002Vapor–liquid–solid tri-phase pulsed-laser epitaxy of RBa2Cu3O7−y single-crystal filmscitations
- 2002In-plane lattice constant tuning of an oxide substrate with Ba1−xSrxTiO3 and BaTiO3 buffer layerscitations
- 2002Systematic examination of carrier polarity in composition spread ZnO thin films codoped with Ga and Ncitations
- 2001Ferromagnetic interactions in p- and n-type II-VI diluted magnetic semiconductors
- 2001High-temperature goniometer for thin film growth and ion scattering studiescitations
- 2001Anatase TiO2 thin films grown on lattice-matched LaAlO3 substrate by laser molecular-beam epitaxycitations
- 2000In-plane anisotropic strain of ZnO closely packed microcrystallites grown on tilted (0001) sapphire
Places of action
| Organizations | Location | People |
|---|
article
Epitaxial growth and physical properties of a room temperature ferromagnetic semiconductor: Anatase phase Ti1−xCoxO2
Abstract
<jats:p>There has been considerable debate regarding the origin of ferromagnetism in the ferromagnetic semiconductor anatase phase TiO2 doped with Co, ranging from carrier induced ferromagnetism in a framework of diluted magnetic semiconductor to merely the precipitation of ferromagnetic and metallic Co precipitates in the TiO2 matrix. This paper reports on a systematic investigation of the structures, together with the electronic and magneto-optical properties, of thin films of anatase phase TiO2, doped with Co. Films of anatase Ti1−xCoxO2 (x=0–0.10) were grown epitaxially on LaSrAlO4 (001) substrates, using pulsed laser deposition method. In order to control n-type carrier concentration, the oxygen pressure during the growth was systematically varied, yielding films with insulative, semiconductive (carrier concentration n∼1×1017 cm−3), and metallic (n∼2×1019 cm−3) properties. Reflection high energy electron diffraction patterns, atomic force microscopy, and transmission electron microscopy show no evidence of Co segregation in these films. Magneto-optical response was examined by measuring magneto-optical circular dichroism (MCD) spectra at room temperature. A large MCD peak appears at a photon energy close to the band gap of TiO2. The magnetic field dependence of MCD signal indicates ferromagnetic behavior, which is similar to that of the magnetization. The MCD intensity increases systematically with the increase of n or x. Since MCD response originates from charge carriers at the band edge, one can conclude that interaction between the charge carriers and Co impurities is essential to realize ferromagnetism.</jats:p>