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Zou, J.
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Topics
Publications (17/17 displayed)
- 2023A study on the effects of laser shock peening on the microstructure and substructure of Ti–6Al–4V manufactured by Selective Laser Meltingcitations
- 2016Pulsed Field Magnetization of Single-Grain Bulk YBCO Processed from Graded Precursor Powders
- 2016III-V compound semiconductor nanowires for optoelectronic device applicationscitations
- 2011III-V compound semiconductor nanowires for optoelectronic device applicationscitations
- 2009III-V compound semiconductor nanowirescitations
- 2009Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
- 2004Dynamic annealing in III-nitrides under ion bombardmentcitations
- 2004Lattice damage produced in GaN by swift heavy ionscitations
- 2003Ion-beam-produced structural defects in ZnOcitations
- 2002Ion-beam-produced damage and its stability in AlN filmscitations
- 2001Effect of ion species on the accumulation of ion-beam damage in GaN
- 2001The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaNcitations
- 2001Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperaturescitations
- 2000Ion-beam-induced porosity of GaNcitations
- 2000Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardmentcitations
- 2000Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in siliconcitations
- 2000Damage buildup in GaN under ion bombardmentcitations
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article
Dynamic annealing in III-nitrides under ion bombardment
Abstract
<p>The damage buildup behavior in Al <sub>x</sub>Ga <sub>1-x</sub>N films bombarded with kilo-electron-volt heavy ions at 77 and 300 K was studied. Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy were used for the study. It was found that the damage buildup behavior at 300 K was essentially similar for all the AlGaN films studied. The results show that an increase in Al content changes the main features of the amorphization behavior and strongly enhances dynamic annealing processes.</p>