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Kucheyev, S. O.
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Topics
Publications (18/18 displayed)
- 2007Energetic Processing of Interstellar Silicate Grains by Cosmic Rayscitations
- 2005Ion irradiation-induced disordering of semiconductorscitations
- 2004Ion-beam-defect processes in group-III nitrides and ZnOcitations
- 2004Dynamic annealing in III-nitrides under ion bombardmentcitations
- 2004Lattice damage produced in GaN by swift heavy ionscitations
- 2003Ion-beam-produced structural defects in ZnOcitations
- 2002Electrical isolation of ZnO by ion bombardmentcitations
- 2002Ion-beam-produced damage and its stability in AlN filmscitations
- 2002Structural disorder in ion-implanted AlxGa1-xNcitations
- 2001Effect of ion species on the accumulation of ion-beam damage in GaN
- 2001Electrical isolation of GaN by MeV ion irradiationcitations
- 2001The effects of ion mass, energy, dose, flux and irradiation temperature on implantation disorder in GaNcitations
- 2001Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperaturescitations
- 2000Ion-beam-induced porosity of GaNcitations
- 2000Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardmentcitations
- 2000Ion-beam-induced dissociation and bubble formation in GaNcitations
- 2000Damage buildup in GaN under ion bombardmentcitations
- 2000Surface disordering and nitrogen loss in GaN under ion bombardment
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article
Dynamic annealing in III-nitrides under ion bombardment
Abstract
<p>The damage buildup behavior in Al <sub>x</sub>Ga <sub>1-x</sub>N films bombarded with kilo-electron-volt heavy ions at 77 and 300 K was studied. Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy were used for the study. It was found that the damage buildup behavior at 300 K was essentially similar for all the AlGaN films studied. The results show that an increase in Al content changes the main features of the amorphization behavior and strongly enhances dynamic annealing processes.</p>